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The MGB15N40CLT4 is a logic level N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current switching applications. It features monolithic circuitry integrating ESD and over-voltage clamped protection. The device offers a collector-emitter voltage of 440 VDC and continuous collector current of 15 A at 25°C case temperature. It supports pulsed currents up to 50 A and includes an optional integrated gate resistor. The component operates within a junction temperature range of -55°C to 175°C.
Verify the specific ordering suffix T4 corresponds to the D2PAK package and tape and reel shipping configuration. Confirm that the device marking matches the G15N40CL code. Ensure the procurement specification aligns with the preferred device designation MGB15N40CL for optimal value and future use recommendations.
Select this IGBT when designing circuits requiring high voltage handling and robust transient protection. The integrated gate-collector clamp reduces external component requirements. Consider the thermal resistance values for heatsinking calculations. Verify compatibility with logic-level gate drive voltages due to the low threshold characteristic.
This component belongs to the MGP/MGB series of Ignition IGBTs from onsemi. It shares functional similarities with other devices in the family but is distinguished by its specific packaging and electrical ratings. The MGB variant utilizes the D2PAK form factor, differing from the TO-220AB package used by the MGP counterpart.
The MGP15N40CL serves as a pin-compatible alternative in the TO-220AB package. Verify package dimensions and thermal characteristics before substitution. Ensure the replacement device meets the same voltage and current specifications for the intended application.