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The MGD622 is a 600 V trench IGBT with an integrated fast recovery diode manufactured by Sanken Electric. It features a collector-emitter voltage (VCE) of 600 V and a continuous collector current (IC) of 20 A at TC = 100 °C. The typical saturation voltage (VCE(sat)) is 2.1 V, and the typical reverse recovery time (tf) is 120 ns at TJ = 25 °C. The integrated diode has a typical forward voltage (VF) of 1.2 V. Packaged in TO3P-3L, it supports a maximum junction temperature of 150 °C.
Verify component authenticity through authorized Sanken distributors or direct manufacturer channels. Confirm datasheet revision status prior to integration. Ensure compliance with export control regulations if applicable. Validate thermal management requirements against absolute maximum ratings during system design.
Select based on required voltage rating of 600 V and current handling capability up to 40 A at lower case temperatures. Consider thermal resistance values for heat sink sizing. Evaluate switching performance characteristics against specific load conditions and gate drive requirements for optimal efficiency.
This component belongs to the family of trench IGBTs designed for power conversion applications. It integrates a freewheeling diode within a single package to simplify circuit topology. The TO3P-3L package provides robust mechanical mounting and thermal dissipation capabilities suitable for high-power consumer electronics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers.
The maximum operating junction temperature is 150 °C.
The Sanken original trench structure decreases gate capacitance, achieving high speed switching and reducing switching loss.
The typical forward voltage (VF) of the emitter to collector diode is 1.2 V.