MGD623N

MGD623N

$1.92
  • Description:IGBT 600V 50A 150W TO3P
  • Series:-

SKU:abd097a830d0 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 50A 150W TO3P
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):50 A
  • Current - Collector Pulsed (Icm):100 A
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 50A
  • Power - Max:150 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:75ns/300ns
  • Test Condition:300V, 50A, 39Ohm, 15V
  • Reverse Recovery Time (trr):300 ns
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3 Full Pack
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

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MGD623N

Overview

The MGD623N is a 600 V trench IGBT with an integrated fast recovery diode manufactured by Sanken Electric. It utilizes a proprietary trench structure to reduce gate capacitance, enabling high-speed switching and reduced switching loss for improved circuit efficiency. Key electrical parameters include a collector-emitter voltage (VCE) of 600 V, a continuous collector current (IC) of 37 A at TC = 100 °C, and a typical saturation voltage (VCE(sat)) of 1.7 V. The device features a typical reverse recovery time (tf) of 200 ns and a forward voltage (VF) of 1.2 V. It is housed in a TO3P-3L package.

Feature Summary

  • Sanken original trench structure decreases gate capacitance
  • Achieves high speed switching and switching loss reduction
  • Integrated low VF fast recovery diode

Applications

  • Microwave Oven
  • IH Cooker
  • Inverter Circuit

Procurement Notes

Verify the specific datasheet revision (e.g., Rev.1.1) against the manufacturer's official website before procurement. Confirm that the bare lead frame meets Pb-free RoHS compliance requirements for your assembly process. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values under expected operating conditions.

Selection Notes

Select this component for applications requiring 600 V blocking capability and moderate current handling up to 37 A at elevated temperatures. Consider the 1.7 V typical saturation voltage for conduction loss calculations. Evaluate the 200 ns typical fall time for high-frequency inverter designs. Verify that the TO3P-3L package dimensions fit the mechanical constraints of the target equipment.

Part Context

The MGD623N belongs to Sanken Electric's line of 600 V trench IGBTs designed for power control applications. It is part of a family of devices optimized for home appliance inverters, specifically targeting microwave ovens and induction heating cookers where efficiency and switching speed are critical performance factors.

Replacement Considerations

Consult Sanken Electric sales representatives for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' 600 V IGBTs without verifying pinout, thermal characteristics, and electrical ratings against the official datasheet.

FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCE) rating is 600 V.

What is the typical saturation voltage at rated current?

The typical collector-emitter saturation voltage (VCE(sat)) is 1.7 V when tested at IC = 50 A and VGE = 15 V.

Does the device include an integrated diode?

Yes, the MGD623N includes an integrated emitter-to-collector fast recovery diode with a typical forward voltage (VF) of 1.2 V.

MGD623NMGD623N
$1.92
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