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The MGD623N is a 600 V trench IGBT with an integrated fast recovery diode manufactured by Sanken Electric. It utilizes a proprietary trench structure to reduce gate capacitance, enabling high-speed switching and reduced switching loss for improved circuit efficiency. Key electrical parameters include a collector-emitter voltage (VCE) of 600 V, a continuous collector current (IC) of 37 A at TC = 100 °C, and a typical saturation voltage (VCE(sat)) of 1.7 V. The device features a typical reverse recovery time (tf) of 200 ns and a forward voltage (VF) of 1.2 V. It is housed in a TO3P-3L package.
Verify the specific datasheet revision (e.g., Rev.1.1) against the manufacturer's official website before procurement. Confirm that the bare lead frame meets Pb-free RoHS compliance requirements for your assembly process. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values under expected operating conditions.
Select this component for applications requiring 600 V blocking capability and moderate current handling up to 37 A at elevated temperatures. Consider the 1.7 V typical saturation voltage for conduction loss calculations. Evaluate the 200 ns typical fall time for high-frequency inverter designs. Verify that the TO3P-3L package dimensions fit the mechanical constraints of the target equipment.
The MGD623N belongs to Sanken Electric's line of 600 V trench IGBTs designed for power control applications. It is part of a family of devices optimized for home appliance inverters, specifically targeting microwave ovens and induction heating cookers where efficiency and switching speed are critical performance factors.
Consult Sanken Electric sales representatives for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' 600 V IGBTs without verifying pinout, thermal characteristics, and electrical ratings against the official datasheet.
The maximum collector-emitter voltage (VCE) rating is 600 V.
The typical collector-emitter saturation voltage (VCE(sat)) is 1.7 V when tested at IC = 50 A and VGE = 15 V.
Yes, the MGD623N includes an integrated emitter-to-collector fast recovery diode with a typical forward voltage (VF) of 1.2 V.