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Product Detailed Parameters
- Description：IGBT TRENCH 600V 50A TO-247-3
- Series：-
- Mfr：Sanken Electric USA Inc.
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 50A
- Power - Max：150 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：65 nC
- Td (on/off) @ 25°C：75ns/300ns
- Test Condition：300V, 50A, 39Ohm, 15V
- Reverse Recovery Time (trr)：350 ns
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The MGD633 is a 600 V trench IGBT with an integrated fast recovery diode manufactured by Sanken Electric. It features a collector-emitter voltage (VCE) of 600 V and a continuous collector current (IC) of 37 A at TC = 100 °C. The typical saturation voltage (VCE(sat)) is 1.8 V, and the typical reverse recovery time (tf) is 120 ns at TJ = 25 °C. The integrated diode has a typical forward voltage (VF) of 1.3 V. The component utilizes a bare lead frame compliant with RoHS standards and is housed in a TO247-3L package.
Feature Summary
- Sanken original trench structure decreases gate capacitance for high speed switching
- Integrated low VF fast recovery diode reduces switching loss
- Bare lead frame construction that is Pb-free and RoHS compliant
Applications
- Microwave Oven
- IH Cooker
- Inverter Circuit
Procurement Notes
Verify the specific revision status before procurement as the datasheet indicates this model is not recommended for new designs. Confirm compliance with applicable environmental regulations such as the EU RoHS Directive prior to integration. Contact a Sanken sales representative to confirm if the contents reflect the latest revisions and to discuss suitability for applications requiring higher reliability than general purpose equipment.
Selection Notes
Select this component for circuits requiring 600 V blocking capability and up to 37 A continuous current at elevated case temperatures. Ensure thermal management maintains the junction temperature below 150 °C given the maximum power dissipation rating. Consider the 120 ns typical fall time and 1.8 V saturation voltage when designing for efficiency in microwave or IH cooker inverter topologies.
Part Context
The MGD633 belongs to Sanken's lineup of trench IGBTs designed to improve circuit efficiency through reduced gate capacitance and switching losses. It integrates a fast recovery diode to support inductive load commutation. The device is packaged in a TO247-3L format suitable for through-hole mounting on printed circuit boards.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing driver circuits and thermal constraints if considering alternative components from other manufacturers.
FAQ
What is the maximum collector to emitter dv/dt rating?
The maximum collector to emitter dv/dt is 5 V/ns when the case temperature is less than or equal to 125 °C.
What are the absolute maximum ratings for the gate to emitter voltage?
The absolute maximum gate to emitter voltage (VGE) is ±30 V.
Is the MGD633 suitable for aerospace or nuclear power control systems?
No, the product is not intended for use in applications requiring extremely high reliability such as aerospace equipment or nuclear power control systems.
