MGF65A6H

MGF65A6H

  • Description:IGBT TRENCH FS 650V 80A TO-3P-3L
  • Series:-

SKU:30ef445f2fda Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 80A TO-3P-3L
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):100 A
  • Vce(on) (Max) @ Vge, Ic:2.37V @ 15V, 60A
  • Power - Max:405 W
  • Switching Energy:1.4mJ (on), 1.3mJ (off)
  • Input Type:Standard
  • Gate Charge:110 nC
  • Td (on/off) @ 25°C:50ns/130ns
  • Test Condition:400V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr):50 ns
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P-3L
  • Grade:-
  • Qualification:-

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MGF65A6H

Overview

The MGF65A6H is a 650 V Field Stop IGBT manufactured by Sanken Electric, utilizing an original trench structure to reduce gate capacitance and switching losses. It features an integrated fast recovery diode and supports a continuous collector current of 60 A at TC = 100 °C. The device offers a short-circuit withstand time of 10 μs, with typical saturation voltage (VCE(sat)) of 1.9 V and forward voltage (VF) of 1.8 V. Operating junction temperature reaches 175 °C, and it is available in the TO3P-3L package.

Feature Summary

  • Sanken original trench structure decreases gate capacitance for high-speed switching
  • Integrated fast recovery diode reduces circuit complexity
  • RoHS compliant construction

Applications

  • Welding Invertor
  • PFC Circuit

Procurement Notes

Verify component authenticity through authorized Sanken Electric distributors or direct manufacturer channels. Confirm RoHS compliance status and check for the "Not Recommended for New Designs" designation on datasheets before procurement. Ensure packaging matches the specified TO3P-3L format and validate lot numbers against manufacturing records.

Selection Notes

Select the MGF65A6H when a 650 V rating and 60 A continuous current capability are required. Consider the TO3P-3L package for thermal management needs. Evaluate the 10 μs short-circuit withstand time for protection requirements. Note that this part is marked as not recommended for new designs; assess long-term availability and lifecycle status carefully.

Part Context

The MGF65A6H belongs to the xGF65A6H series from Sanken Electric, which includes the KGF65A6H variant. Both share identical electrical characteristics but differ in physical packaging. The MGF65A6H specifically utilizes the TO3P-3L package, distinguishing it from the TO247-3L version.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source material. Designers should consult Sanken Electric directly for alternative recommendations or cross-reference based on specific electrical parameters if sourcing from other manufacturers.

FAQ

What is the maximum short-circuit withstand time for the MGF65A6H?

The MGF65A6H has a short-circuit withstand time of 10 μs under conditions of VGE = 15 V, VCE = 400 V, and TJ = 175 °C.

How does the trench structure affect performance?

Sanken's original trench structure decreases gate capacitance, achieving high-speed switching and reducing switching loss to improve circuit efficiency.

What is the typical forward voltage of the integrated diode?

The typical forward voltage (VF) of the emitter-to-collector diode is 1.8 V at IF = 30 A.

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