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The MGF65A6H is a 650 V Field Stop IGBT manufactured by Sanken Electric, utilizing an original trench structure to reduce gate capacitance and switching losses. It features an integrated fast recovery diode and supports a continuous collector current of 60 A at TC = 100 °C. The device offers a short-circuit withstand time of 10 μs, with typical saturation voltage (VCE(sat)) of 1.9 V and forward voltage (VF) of 1.8 V. Operating junction temperature reaches 175 °C, and it is available in the TO3P-3L package.
Verify component authenticity through authorized Sanken Electric distributors or direct manufacturer channels. Confirm RoHS compliance status and check for the "Not Recommended for New Designs" designation on datasheets before procurement. Ensure packaging matches the specified TO3P-3L format and validate lot numbers against manufacturing records.
Select the MGF65A6H when a 650 V rating and 60 A continuous current capability are required. Consider the TO3P-3L package for thermal management needs. Evaluate the 10 μs short-circuit withstand time for protection requirements. Note that this part is marked as not recommended for new designs; assess long-term availability and lifecycle status carefully.
The MGF65A6H belongs to the xGF65A6H series from Sanken Electric, which includes the KGF65A6H variant. Both share identical electrical characteristics but differ in physical packaging. The MGF65A6H specifically utilizes the TO3P-3L package, distinguishing it from the TO247-3L version.
Publicly confirmed substitute part numbers are not provided in the source material. Designers should consult Sanken Electric directly for alternative recommendations or cross-reference based on specific electrical parameters if sourcing from other manufacturers.
The MGF65A6H has a short-circuit withstand time of 10 μs under conditions of VGE = 15 V, VCE = 400 V, and TJ = 175 °C.
Sanken's original trench structure decreases gate capacitance, achieving high-speed switching and reducing switching loss to improve circuit efficiency.
The typical forward voltage (VF) of the emitter-to-collector diode is 1.8 V at IF = 30 A.