MGP14N60E

MGP14N60E

$0.43
  • Description:IGBT, 18A, 600V, N-CHANNEL
  • Series:*

SKU:e872bb0a7843 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT, 18A, 600V, N-CHANNEL
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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MGP14N60E

Overview

The MGP14N60E is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a collector-emitter voltage rating of 600V and a continuous collector current capacity of 18A. The device is housed in a TO-220AB package, designed for robust power switching applications. Key electrical characteristics include short-circuit rated operation and low on-state voltage, contributing to efficient energy conversion. This component serves as a fundamental building block for medium-power electronic circuits requiring reliable high-voltage control.

Feature Summary

  • Short-circuit rated capability for enhanced system protection
  • Low on-state voltage to minimize conduction losses
  • N-channel configuration for standard switching logic compatibility

Applications

  • Industrial motor drives
  • Switched-mode power supplies
  • Inverter circuits

Procurement Notes

Verify the specific datasheet revision and manufacturing date code upon ordering. Confirm that the TO-220AB package variant matches the thermal requirements of the target design. Ensure compliance with RoHS directives if required by the end-product specifications. Cross-reference the part number with official onsemi catalogs to confirm current production status and availability channels.

Selection Notes

Select this IGBT when a 600V blocking voltage and 18A continuous current are required in a through-hole package. Consider the short-circuit withstand time if the application demands fault tolerance without immediate shutdown. Evaluate thermal management needs based on the TO-220AB package's thermal resistance characteristics. Compare on-state voltage drops against alternative devices to optimize overall system efficiency.

Part Context

This component belongs to onsemi's lineup of single IGBTs, specifically engineered for general-purpose power switching. It complements other discrete semiconductors like MOSFETs and diodes within power electronics portfolios. The MGP series typically targets cost-effective solutions for industrial and consumer applications where moderate power levels and reliable performance are prioritized over ultra-high frequency operation.

Replacement Considerations

Direct substitutes may include other 600V, 18A N-channel IGBTs in TO-220AB packages from various manufacturers. Verify pinout compatibility and thermal parameters before substitution. Check for equivalent short-circuit ratings and switching speeds to ensure circuit stability. Consult official cross-reference guides for validated alternatives.

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