MGP20N14CL

$0.43

Description：IGBT 135V 20A TO-220-3
Series：-

SKU:734019cd7a93 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 135V 20A TO-220-3
Series：-
Mfr：onsemi
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：135 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：-
Power - Max：150 W
Switching Energy：-
Input Type：Logic
Gate Charge：20 nC
Td (on/off) @ 25°C：-
Test Condition：68V, 20A, 9.1Ohm, 5V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

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MGP20N14CL

Overview

The MGP20N14CL is a logic level Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It is housed in a TO-220-3 through-hole package and rated for a collector-emitter voltage of 135 V with a continuous collector current of 20 A. The device dissipates up to 150 W of power. Key electrical characteristics include a gate-emitter ESD protection feature and gate-collector overvoltage protection derived from SMARTDISCRETE technology. The component is designed for efficient switching applications requiring robust reliability and simplified drive requirements.

Feature Summary

Logic level gate architecture for direct microcontroller interfacing
Integrated gate-emitter electrostatic discharge protection
Gate-collector overvoltage protection mechanism
Through-hole TO-220-3 packaging for thermal management

Applications

Motor control drives
Power supply inverters
Industrial switching circuits

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation when sourcing this component. Confirm that the TO-220-3 package dimensions match your PCB footprint requirements. Ensure the supplier provides authentic onsemi products to guarantee the specified 135 V rating and 20 A current handling capabilities are met under actual operating conditions.

Selection Notes

Select the MGP20N14CL for applications requiring a 135 V blocking capability and 20 A continuous current in a standard through-hole format. Its logic level gate threshold simplifies driver circuit design compared to standard IGBTs. Consider the 150 W power dissipation limit and ensure adequate heatsinking is implemented to maintain junction temperatures within safe operational limits during high-load scenarios.

Part Context

This component belongs to onsemi's discrete power transistor lineup, specifically within the IGBT category. It utilizes SMARTDISCRETE technology to enhance reliability through integrated protection features. The product serves as a solution for medium-power switching tasks where robustness and ease of drive are prioritized over ultra-high frequency performance.