MGV-125-21

MGV-125-21

  • Description:VARACTOR DIODE,GAAS,HYPERABRUPT,
  • Series:MGV

SKU:34b0f4f96318 Category: Brand:

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Product Detailed Parameters

  • Description:VARACTOR DIODE,GAAS,HYPERABRUPT,
  • Series:MGV
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Capacitance @ Vr, F:0.77pF @ 4V, 1MHz
  • Capacitance Ratio:10
  • Capacitance Ratio Condition:C2/C20
  • Voltage - Peak Reverse (Max):22 V
  • Diode Type:Single
  • Q @ Vr, F:4000 @ 4V, 50MHz
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Chip

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MGV-125-21

Overview

The MGV-125-21 is a Gallium Arsenide (GaAs) hyperabrupt varactor diode from the MGV125-x Series, characterized by a constant gamma of 1.25. It features a passivated mesa construction designed for low leakage and excellent post-tuning stability. The device supports a tuning voltage range of 0 to 22 V. In its standard chip configuration (C01A), it provides a nominal total capacitance of 0.70 pF at 4 V with a minimum Q factor of 4,000 at 50 MHz. Packaged variants such as E28, H20, P55, and 0805-2 offer adjusted parasitic characteristics suitable for specific circuit integration requirements.

Feature Summary

  • Passivated mesa construction ensures low leakage current and stable performance after tuning operations.
  • Constant gamma value of 1.25 enables predictable capacitance-voltage relationships across the operating range.
  • Available in multiple package styles including bare die and surface mount options to accommodate various design constraints.

Applications

  • Tunable RF filters
  • Voltage-controlled oscillators (VCOs)
  • Phase shifters

Procurement Notes

Verify the exact ordering suffix against the official MACOM datasheet to confirm the intended package style, as the base model number applies to the entire series. Confirm RoHS compliance status and any available military screening options per MIL-PRF-19500 or MIL-PRF-35834 if required for the specific application environment.

Selection Notes

Select the appropriate package variant based on the required parasitic inductance and capacitance values at 1 GHz. The bare die offers optimal high-frequency performance, while packaged versions provide mechanical handling benefits. Ensure the selected part meets the specific tuning ratio and Q-factor requirements for the target frequency band up to 40 GHz.

Part Context

This component belongs to the MGV125-x family of GaAs hyperabrupt varactor diodes. Other members in this series include MGV125-08 through MGV125-26, offering varying nominal capacitances from 0.30 pF to 2.00 pF. Complementary families with different constant gamma values, such as MGV075-x and MGV100-x, are also available for designs requiring different tuning sensitivities.

Replacement Considerations

Direct replacements within the same series require matching the nominal capacitance and constant gamma. Variants like MGV125-21-E28 or MGV125-21-H20 serve as direct packaged equivalents to the bare die version. Cross-family substitution with MGV100-x or MGV075-x models is possible only if the circuit design accommodates the differing gamma constants.

FAQ

What is the constant gamma value for the MGV-125-21?

The MGV-125-21 has a constant gamma value of 1.25.

Does the MGV-125-21 support military screening?

Yes, screening is available per MIL-PRF-19500 and MIL-PRF-35834 standards.

What is the maximum tuning voltage for this device?

The device supports a tuning voltage range of 0 to 22 V.

MGV-125-21MGV-125-21

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