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The MGW14N60ED is a high-voltage N-channel Power MOSFET from onsemi, designed for robust power switching applications. It features a TO-247AD package with an isolated tab for efficient thermal management. Key electrical specifications include a drain-source voltage (V_DSS) of 600V and a continuous drain current (I_D) of 14A at 25°C. The device exhibits a maximum on-resistance (R_DS(on)) of 0.55Ω at V_GS = 10V, ensuring low conduction losses. With a total gate charge of 38nC and fast switching capabilities, it supports high-frequency operation in hard-switching environments.
Verify the specific ordering suffix to ensure correct packaging and tape-and-reel options if required. Confirm that the TO-247AD package dimensions match your PCB footprint requirements. Check for any recent updates to the datasheet regarding thermal characteristics or testing conditions. Ensure compliance with RoHS directives if applicable to your manufacturing process. Validate supplier authenticity through authorized distribution channels.
Select this component when a 600V rating and 14A current capacity are necessary for power conversion tasks. Consider its R_DS(on) value against thermal constraints in your design. Evaluate the gate charge parameters for compatibility with your driver circuitry. Compare avalanche ratings against expected transient voltages in the application environment.
This part belongs to onsemi's MGW series of high-voltage MOSFETs, engineered for rugged performance. It complements other devices in the lineup offering similar voltage classes but varying current ratings. The series targets applications requiring reliable switching in harsh electrical environments.
Direct substitutes may include parts from the same MGW series with adjusted current ratings. Cross-reference with other manufacturers' 600V TO-247 packages for pin-compatible alternatives. Verify parameter equivalence before substitution.