MHE1003NR3

MHE1003NR3

  • Description:RF MOSFET LDMOS 28V OM780-2
  • Series:-

SKU:4d0221a27b5e Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V OM780-2
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.4GHz ~ 2.5GHz
  • Gain:14.1dB
  • Voltage - Test:28 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:50 mA
  • Power - Output:53dBm
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:OM-780-2
  • Supplier Device Package:OM-780-2
  • Configuration:-

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MHE1003NR3

Overview

The MHE1003NR3 is an RF LDMOS transistor manufactured by NXP Semiconductors, designed for consumer and commercial cooking applications. It operates in the 2450 MHz ISM band with a continuous wave (CW) power output of 250 W at a drain voltage of 32 V. The device utilizes silicon technology and is supplied in a reel package. This component is classified as an RF power MOSFET transistor.

Feature Summary

  • Designed specifically for high-power RF applications in consumer and commercial cooking equipment
  • Operates within the 2450 MHz Industrial, Scientific, and Medical (ISM) frequency band
  • Capable of delivering 250 W continuous wave output power under specified bias conditions

Applications

  • Consumer cooking appliances operating in the 2450 MHz band
  • Commercial cooking systems requiring high RF power output
  • RF power amplifier stages for microwave heating applications

Procurement Notes

Verify availability status carefully as this component is listed as discontinued or archived by the manufacturer. Historical datasheets are available for reference only. Confirm compatibility with existing designs before procurement attempts, as supply may be limited or restricted in certain regions. Ensure sourcing channels provide authentic components given the end-of-life status.

Selection Notes

Select this component for legacy designs requiring 250 W CW performance at 2450 MHz. Consider that it is an archived product; verify if newer equivalents exist within the NXP portfolio for new developments. Ensure thermal management solutions support the power dissipation requirements associated with 250 W RF output. Check specific biasing requirements of 32 V and 25 mA quiescent current during design integration.

Part Context

The MHE1003NR3 belongs to NXP's High Performance RF portfolio, which includes transistors, diodes, and ICs for demanding RF applications. It is part of the RF MOSFET transistor category, specifically utilizing LDMOS technology. This series targets high-efficiency power amplification in regulated ISM bands, supporting robust performance in heating and cooking technologies.

Replacement Considerations

The MHT1003N is identified as a related variant with similar specifications, including 250 W CW output at 2450 MHz and 32 V operation. Verify pinout and electrical characteristics against the MHT1003N datasheet for potential substitution in existing circuits, noting both are archived products.

MHE1003NR3MHE1003NR3

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