MHT1003NR3

Description：RF MOSFET LDMOS OM780-2
Series：-

SKU:cd34df9cb2f7 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS OM780-2
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：2.4GHz ~ 2.5GHz
Gain：15.9dB
Voltage - Test：-
Current Rating (Amps)：-
Noise Figure：-
Current - Test：-
Power - Output：250W
Voltage - Rated：32 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：OM-780-2
Supplier Device Package：OM-780-2
Configuration：-

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MHT1003NR3

Overview

The MHT1003NR3 is a silicon RF LDMOS power transistor manufactured by NXP Semiconductors. Designed for the 2450 MHz ISM band, it delivers 250 W continuous wave output at 32 V drain voltage with 59% power-added efficiency. The device features high ruggedness, maintaining no degradation under greater than 10:1 VSWR with 3 dB overdrive. It is packaged in a reel format and is currently discontinued.

Feature Summary

Engineered for high-power consumer and commercial cooking applications within the 2450 MHz ISM band
Provides robust load mismatch tolerance ensuring device integrity under severe reflection conditions
Utilizes silicon lateral double-diffused metal oxide semiconductor technology for reliable RF performance

Applications

Consumer microwave ovens
Commercial food heating equipment
Industrial dielectric heating systems

Procurement Notes

This component is officially discontinued and not recommended for new designs. Availability is restricted to existing stock or secondary markets. Verify authenticity through authorized channels and confirm datasheet revisions before integration into legacy maintenance projects.

Selection Notes

Select this part only for replacement of existing MHT1003N units in established production lines. Evaluate thermal management requirements carefully as the device operates at high power levels. Ensure biasing circuits support the specified 32 V drain voltage and 25 mA quiescent current for optimal linearity and efficiency.

Part Context

The MHT1003NR3 belongs to NXP's portfolio of RF power transistors optimized for ISM band operations. It serves as the tape-and-reel variant of the MHT1003N, sharing identical electrical characteristics. This family targets high-volume manufacturing environments requiring consistent RF performance in domestic and industrial heating appliances.

Replacement Considerations

Direct substitute: MHT1003N. Verify pinout compatibility and thermal interface specifications when transitioning between reel and bulk packaging variants.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.