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The MHT2025GNR1 is an AIRFAST RF power LDMOS transistor manufactured by NXP USA Inc. It is designed for industrial heating applications operating at 2450 MHz. The device delivers 25 W of continuous wave (CW) output power with a supply voltage of 28 V. It utilizes LD MOS technology and is housed in a TO-270BA surface-mount package, specifically the TO-270-2 winged configuration. This component is part of the MHT series intended for wideband integrated circuit solutions.
Verify current availability as distribution channels may vary. Confirm RoHS compliance status through official documentation, as some sources indicate non-compliance while others suggest lead-free variants exist. Ensure the specific suffix matches the required packaging and environmental specifications for your design requirements.
Select this component for high-power RF applications requiring 25 W output at 2450 MHz. Consider the TO-270BA surface-mount package for board space efficiency. Evaluate thermal management needs due to the power density. Compare against other MHT series devices if different power levels or frequencies are required.
The MHT2025GNR1 belongs to the MHT series of RF power transistors from NXP. These devices are engineered for robust performance in demanding industrial environments. The series typically includes variants like MHT2000 and MHT2025, offering scalable power options for 2450 MHz applications.
Check for direct substitutes within the MHT series, such as MHT2000NR1 or MHT2000GNR1, depending on power requirements. Verify pinout compatibility and thermal characteristics before substitution.