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Product Detailed Parameters
- Description：IGBT MODULES,E3
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Bulk
- IGBT Type：-
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 225A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：E3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：225 A
- Power - Max：1.54 kW
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：15600 pF @ 25 V
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Overview
The MIF225R12E3TL-BP is a silicon IGBT module manufactured by Micro Commercial Components (MCC). It features a 1200V collector-emitter voltage rating and a continuous collector current of 225A at a case temperature of 100°C. The device incorporates an ultra-fast and soft recovery anti-parallel freewheeling diode (FWD) with a forward current rating of 225A. Key electrical parameters include a maximum junction temperature of 175°C, a typical Vce(sat) of 1.90V at 25°C, and short-circuit withstand capability of 10μs at 1100A. The module utilizes an A2S package with an integrated NTC thermistor for thermal monitoring.
Feature Summary
- Includes an ultra-fast and soft recovery anti-parallel freewheeling diode
- Features low switching losses and low Vce(sat) with a positive temperature coefficient
- Designed in a low inductance package to minimize parasitic effects
- Supports high short circuit capability up to 10 microseconds
Applications
- High frequency switching applications
- Motion and servo control systems
- Uninterruptible power supplies (UPS)
- Welding machines
Procurement Notes
Verify the authenticity of the MIF225R12E3TL-BP component through authorized MCC distributors or direct procurement channels. Ensure that the ordering suffix "BP" corresponds to the specific bulk packaging configuration of four pieces per box as defined in the official documentation. Confirm compliance with RoHS standards and UL 94 V-0 flammability ratings prior to integration into final assemblies.
Selection Notes
Select this module for designs requiring a 1200V blocking voltage and 225A continuous current handling capacity. Consider the 175°C maximum junction temperature for high-temperature operational environments. Evaluate the thermal resistance values and the presence of the integrated NTC thermistor for accurate thermal management and protection circuitry design within the target application constraints.
Part Context
This component belongs to the MIF series of IGBT modules from Micro Commercial Components. It represents a discrete power semiconductor solution designed for robust performance in industrial power conversion contexts. The E3 designation indicates lead-free finish and RoHS compliance, aligning with environmental regulations for modern electronic manufacturing.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires independent verification of pinout compatibility, thermal characteristics, and electrical ratings against alternative manufacturers' offerings.
FAQ
What is the maximum short-circuit withstand time for the MIF225R12E3TL-BP?
The module supports a short-circuit withstand time of 10 microseconds under specified conditions.
Does the MIF225R12E3TL-BP include an integrated thermal sensor?
Yes, the module includes an NTC thermistor for temperature monitoring and protection.
What is the maximum operating junction temperature for this IGBT module?
The maximum junction temperature (Tjmax) is rated at 175°C.
