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Product Detailed Parameters
- Description：IGBT MOD 1200V 270A 1130W Y3DCB
- Series：-
- Mfr：IXYS
- Package：Box
- IGBT Type：NPT
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 150A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Y3-DCB
- Supplier Device Package：Y3-DCB
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：270 A
- Power - Max：1130 W
- Current - Collector Cutoff (Max)：10 mA
- Input Capacitance (Cies) @ Vce：11 nF @ 25 V
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Overview
The MII200-12A4 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by IXYS. It features a single configuration with a built-in diode, housed in a MODULE-7 package with flange mounting and five terminals. The device supports a maximum collector current of 330 A and a collector-emitter breakdown voltage of 1200 V. Typical saturation voltage is 2.2 V, with a maximum gate-emitter voltage of 20 V. It operates up to a maximum junction temperature of 150 °C and includes UL recognition.
Feature Summary
- High short-circuit safe operating area capability for robust fault handling
- Square Reverse Bias Safe Operating Area (RBSOA) for reliable switching performance
- Integrated freewheeling diode within the single IGBT module structure
Applications
- Industrial motor drives and variable frequency drives
- High-power DC-DC converters and power supplies
- Uninterruptible Power Supply (UPS) systems
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm datasheet revision and ordering suffixes match requirements. Ensure proper storage conditions are maintained to prevent moisture damage prior to soldering. Request batch traceability documentation for quality assurance compliance.
Selection Notes
Select this module for applications requiring high current capacity and 1200V blocking voltage. Evaluate thermal management solutions suitable for the MODULE-7 flange mount design. Consider the 330A continuous current rating against peak load demands. Verify gate drive compatibility with the specified 20V maximum gate-emitter voltage limits.
Part Context
The MII200-12A4 belongs to the MID/MII/MDI 300 series of IGBT modules from IXYS. These modules utilize advanced silicon technology for high-efficiency power conversion. The series is designed for industrial applications demanding high reliability and compact form factors within the MODULE-7 housing style.
Replacement Considerations
Cross-reference with other IXYS modules in the same series offering similar electrical ratings. Verify pinout compatibility and mechanical dimensions before substitution. Ensure thermal resistance characteristics align with existing heatsink designs.
