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Product Detailed Parameters
- Description：IGBT MOD 1200V 420A 1700W Y3LI
- Series：-
- Mfr：IXYS
- Package：-
- IGBT Type：NPT
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 300A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Y3-Li
- Supplier Device Package：Y3-Li
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：420 A
- Power - Max：1700 W
- Current - Collector Cutoff (Max)：3.3 mA
- Input Capacitance (Cies) @ Vce：17 nF @ 25 V
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Overview
The MII400-12E4 is a single IGBT module from IXYS, designed for phase-leg and chopper topologies. It features NPT3 IGBT technology with HiPerFRED diodes. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC25) of 420 A at 25°C case temperature. The typical saturation voltage (VCE(sat)) is 2.2 V at 300 A. The module incorporates an isolated ceramic base plate providing 4000 V isolation and utilizes screw connections for main terminals. It weighs 250 g.
Feature Summary
- NPT3 IGBT technology offering low saturation voltage and positive temperature coefficient
- HiPerFRED free-wheeling diodes with fast and soft reverse recovery characteristics
- Integrated Kelvin emitter terminal to facilitate gate drive connection
- Low inductive current path design optimized for high-speed switching applications
Applications
- AC and DC motor drives
- Power supplies with power factor correction
- Uninterruptible Power Supplies (UPS)
- Rectifiers with recuperation capability
Procurement Notes
Verify the specific suffix designation when ordering. The standard MII400-12E4 does not include a temperature sensor. The variant ending in T, such as MID400-12E4(T), includes an integrated NTC sensor for case temperature measurement. Confirm pin compatibility and connector requirements for auxiliary terminals before integration.
Selection Notes
Select this component for high-current phase-leg applications requiring robust short-circuit withstand capability. Ensure thermal management supports the specified power dissipation limits. Verify that the gate drive circuit provides the required ±15 V swing. Consider the ...T variant if real-time junction or case temperature monitoring is necessary for system protection.
Part Context
This device belongs to the IXYS IGBT module family utilizing NPT3 technology. It is functionally related to the MID400-12E4(T) and MDI400-12E4 variants, which share similar electrical ratings but differ in package configuration and the inclusion of an optional NTC temperature sensor. The series is engineered for industrial power conversion systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official IXYS replacement guides or engineering support for validated cross-references matching these specific electrical and mechanical constraints.
