MIO1800-17E10

Overview

The MIO1800-17E10 is a single-switch NPT IGBT module manufactured by IXYS. It features a collector-emitter voltage (VCES) of 1700 V and a continuous collector current (IC80) of 1800 A at a case temperature of 80°C. The typical collector-emitter saturation voltage (VCE(sat)) is 2.3 V at 25°C, rising to 2.6 V at 125°C under rated conditions. The integrated diode supports an average forward current (IF80) of 1800 A with a typical forward voltage (VF) of 1.65 V at 25°C. The module utilizes an E10 package with an AISiC base plate and AlN substrate, providing a thermal resistance from junction to case (RthJC) of 0.009 K/W for the IGBT and 0.017 K/W for the diode.

Feature Summary

• NPT IGBT technology designed for low-loss operation and smooth switching waveforms to improve EMC performance.
• Industry-standard E10 package construction featuring an AISiC base plate for high power cycling capacity and an AlN substrate for low thermal resistance.
• Capable of short-circuit withstand up to 10 µs and square RBSOA for robust protection in high-power applications.

Applications

• AC power converters for industrial drives
• Windmill traction systems
• Laser pulse generators

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified partners. Confirm datasheet revision status as the MIO1800-17E10 is marked as phase-out. Ensure ordering suffixes match specific packaging or testing requirements if applicable. Request batch-specific test reports for critical high-current parameters before final integration into production lines.

Selection Notes

Select this module for high-voltage, high-current single-switch applications requiring robust short-circuit capability. Evaluate thermal management based on the specified RthJC values and operating junction temperature limits. Consider gate resistor selection to optimize switching energy trade-offs between turn-on and turn-off losses. Verify clearance and creepage distances against system insulation requirements.

Part Context

This component belongs to the MIO series of high-power IGBT modules from IXYS. It is designed for demanding industrial environments where reliability under high electrical stress is critical. The E10 package format allows compatibility with standard heatsinking solutions used in large-scale power conversion equipment.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the phase-out status, direct replacements may require design modifications to accommodate differences in pinout, thermal characteristics, or electrical ratings.