MIW40N65RA-BP

Overview

The MIW40N65RA-BP is a Trench and Field Stop Insulated Gate Bipolar Transistor (IGBT) manufactured by Micro Commercial Components. It features a collector-emitter voltage rating of 650V and a continuous DC collector current of 40A at 25°C, with a pulsed collector current capability of 160A. The device supports a maximum junction temperature of 175°C and includes an integrated anti-parallel diode. Key electrical parameters include a typical saturation voltage of 1.95V at 40A and 25°C, a gate-emitter threshold voltage ranging from 4.1V to 6.1V, and a short-circuit withstand time of 5μs. It is housed in a TO-247AB package.

Feature Summary

• Trench and Field Stop technology for low switching losses
• High ruggedness with positive temperature coefficient
• Halogen-free 'Green' device compliant with UL 94 V-0 flammability rating

Applications

• High frequency switching applications
• Medical equipment power supplies
• Uninterruptible power supply (UPS) systems
• Motion and servo control drives

Procurement Notes

Verify the component authenticity through authorized MCC distributors or direct procurement channels to avoid counterfeit parts. Confirm that the ordering suffix '-BP' corresponds to the RoHS-compliant version with lead-free finish as specified in the official datasheet. Ensure storage conditions adhere to the recommended moisture sensitivity levels and handling guidelines provided by the manufacturer.

Selection Notes

Select this IGBT for designs requiring high thermal stability and robust short-circuit protection up to 5 microseconds. Consider the 0.49°C/W junction-to-case thermal resistance for heatsink calculations. Verify that the gate drive circuitry can accommodate the ±20V maximum transient gate-emitter voltage and the specific turn-on/turn-off energy requirements at the target operating temperature.

Part Context

This component belongs to the MIW40N65RA series of trench field stop IGBTs from Micro Commercial Components. The series is engineered for medium-power switching applications where efficiency and reliability are critical. The -BP suffix indicates a specific packaging and compliance configuration within the product line.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 650V/40A ratings, TO-247AB package, and Trench Field Stop topology with other manufacturers' equivalent devices.

FAQ

What is the maximum short-circuit withstand time for the MIW40N65RA?

The device has a short-circuit withstand time of 5 microseconds when VGE=15V, VCC=400V, and VCEM≤650V.

Does the MIW40N65RA include an integrated diode?

Yes, it includes an integrated anti-parallel diode with a forward current rating of 30A and a reverse recovery charge of 0.155 μC at 25°C.

What is the thermal resistance from junction to case?

The IGBT thermal resistance from junction to case is 0.49°C/W, while the diode thermal resistance is 1.05°C/W.