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The MIW50N65F-BP is a silicon N-channel IGBT manufactured by Micro Commercial Components (MCC). It utilizes Trench and Field Stop technology to achieve high switching performance. The device features a collector-emitter voltage of 650 V and a continuous collector current of 50 A at 25°C. It operates within a junction temperature range of -40°C to +175°C. The component is housed in a TO-247AB-3 package with through-hole mounting. Maximum power dissipation is rated at 326 W. The saturation voltage is 1.95 V at 50 A and 25°C.
Verify the authenticity of the MIW50N65F-BP by purchasing exclusively from Micro Commercial Components or their authorized distributors. Counterfeit components pose significant risks; unauthorized sources do not provide warranty coverage or traceability. Confirm that the ordering suffix 'BP' indicates RoHS compliance as specified in the official documentation before finalizing acquisition.
Select this component when a 650 V, 50 A IGBT with low saturation voltage is required. Ensure the application supports the TO-247AB-3 through-hole form factor. Verify thermal management capabilities against the 326 W dissipation rating and the specific thermal resistance values provided in the datasheet. Confirm compatibility with standard gate drive voltages of ±15 V.
This part belongs to the MIW50N65F series of trench field-stop IGBTs produced by Micro Commercial Components. It shares the same electrical specifications and pinout as the MIW75N65F-BP, differing primarily in current handling capacity. Both devices utilize identical packaging and are designed for high-efficiency power conversion applications requiring robust thermal stability.
The MIW75N65F-BP serves as a direct functional substitute within the MCC portfolio, offering identical voltage ratings and package dimensions with higher current capability.