MJ6503 TIN/LEAD

Single Bipolar Transistors Overview

The Central Semiconductor MJ6503 is a PNP silicon power transistor in a JEDEC TO-3 case, designed for high voltage and high speed switching in inductive circuits. It features a collector-emitter voltage (VCEO) of 400 V and continuous collector current (IC) of 8.0 A. Power dissipation reaches 125 W at 25°C case temperature. Key electrical characteristics include a saturation voltage (VCE(sat)) of 1.5 V at IC=4.0A/IB=1.0A. Switching times are td=0.1µs, tr=0.5µs, ts=2.0µs, and tf=0.5µs under specified test conditions.

Single Bipolar Transistors Feature Summary

• Designed for high voltage applications with a 400 V collector-emitter breakdown rating.
• Capable of handling high speed switching operations suitable for inductive load control.
• Constructed as a silicon PNP power transistor utilizing a robust TO-3 metal case package.

Single Bipolar Transistors Applications

• High voltage switching circuits
• Inductive load management systems

Single Bipolar Transistors Procurement Notes

This component is classified as End of Life (EOL) by the manufacturer. No direct replacement part number is currently listed in official documentation. Buyers should verify availability through authorized distributors or submit inquiries to the manufacturer for potential alternate sourcing options. Last purchase orders may be subject to specific timeframes defined in the EOL notice.

Single Bipolar Transistors Selection Notes

Select this component only if the application requires a PNP silicon power transistor with a minimum 400 V collector-emitter voltage rating and an 8.0 A continuous current capacity. The TO-3 package necessitates appropriate thermal management solutions to maintain junction temperatures within the -65°C to +200°C operating range. Verify that the required switching speeds align with the documented transition times.

Single Bipolar Transistors Part Context

The MJ6503 belongs to the family of PNP silicon power transistors manufactured by Central Semiconductor Corp. It utilizes a standard JEDEC TO-3 mechanical outline, providing a metal case configuration for efficient heat dissipation. This device type is typically employed in power electronics where high voltage isolation and moderate current handling are primary design constraints.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are available for the MJ6503. The manufacturer lists 'N/A' for suggested replacements. Users must identify alternative components based on matching electrical specifications such as VCEO, IC, and package type, as no direct cross-reference is provided in official data.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the MJ6503?

The maximum collector-emitter voltage (VCEO) is 400 V.

Is the MJ6503 still in production?

No, the MJ6503 is discontinued and classified as End of Life (EOL).

What is the typical storage temperature range?

The storage junction temperature range is -65°C to +200°C.