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MJD44H11J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is TRANS NPN 80V 8A DPAK. Review the specifications below when checking this part for your BOM.
The Nexperia MJD44H11J is an NPN high power bipolar transistor housed in a DPAK (SOT428C) surface-mounted device plastic package. It features a collector-emitter voltage of 80 V and a continuous collector current of 8 A, with a peak single-pulse current capability of 16 A. The device offers a minimum DC current gain of 60 at 2 A and a transition frequency of 160 MHz. Total power dissipation reaches 20 W when mounted on a 1 cm² tin-plated FR4 PCB pad at 25 °C. Operating junction temperatures range from -55 °C to +150 °C.
Verify the specific ordering suffix 'J' against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component meets RoHS and REACH requirements relevant to your region. Confirm that the DPAK footprint matches your PCB design guidelines before finalizing procurement orders.
Select this component for designs requiring robust NPN switching with moderate voltage ratings. Consider the thermal resistance characteristics and ensure adequate copper area on the PCB for optimal heat dissipation. Verify that the base drive current can support the required collector current while maintaining low saturation voltage.
This part belongs to the MJD44H11 series of high power bipolar transistors manufactured by Nexperia. It serves as the NPN counterpart to the PNP MJD45H11. The device utilizes silicon technology and is designed for general-purpose high-power applications where reliable switching and linear regulation are required.
The PNP complement MJD45H11 is electrically similar but opposite in polarity. Other manufacturers produce equivalent parts under different part numbers within the same voltage and current class, though pinouts and thermal characteristics should be verified.
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