Single Bipolar Transistors MJE13009 product image

MJE13009

  • Description:TRANS NPN 400V 12A TO-220
  • Series:-

SKU:b373528fa5e4 Category: Brand:

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MJE13009 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 400V 12A TO-220. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJE13009

  • Description:TRANS NPN 400V 12A TO-220
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):12:00 AM
  • Voltage - Collector Emitter Breakdown (Max):400 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 3A, 12A
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 5A, 5V
  • Power - Max:2 W
  • Frequency - Transition:4MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MJE13009

MJE13009

Single Bipolar Transistors Overview

The MJE13009 is an NPN silicon power transistor from the SWITCHMODE series, designed for high-voltage, high-speed power switching in inductive circuits. It features a collector-emitter sustaining voltage of 400 V and a collector-base breakdown voltage of 700 V. The device supports a continuous collector current of 12 A and a peak collector current of 24 A. Total power dissipation reaches 100 W at a case temperature of 25°C. The transistor operates within a junction temperature range of -65°C to +150°C.

Single Bipolar Transistors Feature Summary

  • Designed for high-voltage, high-speed power switching in inductive circuits where fall time is critical.
  • Features reverse bias safe operating area (SOA) with inductive loads at a case temperature of 100°C.
  • Provides 700 V blocking capability for demanding switching applications.

Single Bipolar Transistors Applications

  • Switching regulators
  • Inverters
  • Motor controls
  • Solenoid/relay drivers
  • Deflection circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix when purchasing. The standard MJE13009 designation indicates a lead-containing package, while the MJE13009G suffix denotes a Pb-Free package compliant with RoHS standards. Confirm the required environmental compliance version matches the project specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust performance under high voltage and current conditions. Ensure the design accounts for the specified thermal resistance values and derating curves above 25°C. Verify that the base drive circuitry can provide sufficient current to maintain low saturation voltages during operation.

Single Bipolar Transistors Part Context

This device belongs to the SWITCHMODE series of NPN silicon power transistors manufactured by onsemi. It utilizes a TO-220AB plastic package (Case 221A-09). The series is engineered specifically for switchmode power supply applications, offering optimized characteristics for fast switching speeds and high energy handling capabilities compared to general-purpose transistors.

Single Bipolar Transistors Replacement Considerations

MJE13009G

MJE13009MJE13009

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