MJE15030

Single Bipolar Transistors Overview

The MJE15030G is an NPN silicon power transistor from onsemi, housed in a TO-220 package. It supports a maximum DC collector current of 8 A and a collector-emitter voltage (VCEO) of 150 V. The device features a maximum power dissipation of 50 W and a transition frequency (fT) of 30 MHz. Operating temperatures range from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

• Designed as a high-frequency driver for audio amplifier applications
• Utilizes complementary silicon plastic construction for robust performance
• Provides specified DC current gain at defined collector currents

Single Bipolar Transistors Applications

• High-frequency drivers in audio amplifiers
• General-purpose power switching circuits
• Complementary output stages in linear electronics

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official datasheets to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status through manufacturer documentation before integration. Ensure thermal management solutions align with the 50 W dissipation rating under actual operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring 150 V blocking capability and 8 A continuous current handling. The 30 MHz transition frequency makes it suitable for audio frequency applications. Consider the TO-220 form factor for through-hole mounting requirements in power supply or amplifier designs.

Single Bipolar Transistors Part Context

This part belongs to the MJE15030 series of complementary silicon power transistors. It serves as the NPN counterpart to the MJE15031 PNP transistor. The series is engineered for high reliability in audio and general power applications, maintaining consistent performance characteristics across the complementary pair.

Single Bipolar Transistors Replacement Considerations

MJE15031G is the complementary PNP equivalent within the same series. MJE15032G offers higher voltage ratings but shares similar current capabilities.