Single Bipolar Transistors MJE170 product image

MJE170

  • Description:TRANS PNP 40V 3A TO-126
  • Series:-

SKU:b9991649d0c8 Category: Brand:

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MJE170 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 40V 3A TO-126. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MJE170

  • Description:TRANS PNP 40V 3A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1.7V @ 600mA, 3A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 100mA, 1V
  • Power - Max:12.5 W
  • Frequency - Transition:50MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MJE170

MJE170

Single Bipolar Transistors Overview

The MJE170G is a PNP silicon power transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 40 V. The device operates within a junction temperature range of -65 °C to +150 °C and has a power dissipation capacity of 12.5 W. Key electrical parameters include a collector-base voltage of 60 V, an emitter-base voltage of 7 V, and a saturation voltage of 1.7 V at specified conditions. The transition frequency is rated at 50 MHz with a minimum DC current gain (hFE) of 50.

Single Bipolar Transistors Feature Summary

  • PNP polarity configuration suitable for complementary circuit designs.

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official datasheets, as variations like 'MJE170G' indicate RoHS compliance. Confirm package type TO-225AA (TO-92) or TO-220AB availability depending on the exact part number variant required. Ensure thermal management aligns with the 12.5 W dissipation rating when operating near maximum limits.

Single Bipolar Transistors Selection Notes

Select this component for low-voltage PNP switching tasks requiring moderate current handling. Compare against the MJE171 series if higher voltage ratings are needed. Verify that the 40 V collector-emitter breakdown voltage meets the circuit's peak operational requirements without exceeding safe operating area limits.

Single Bipolar Transistors Part Context

This component belongs to the MJE17x family of bipolar junction transistors from onsemi. These devices are widely used in consumer electronics and industrial control systems where reliable PNP switching is required. The MJE170 specifically serves as a lower-voltage counterpart to other members of the series.

Single Bipolar Transistors Replacement Considerations

  • MJE170G

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the MJE170?

The maximum collector-emitter voltage (VCEO) is 40 V.

Is the MJE170 available in a surface-mount package?

Standard versions are typically through-hole; verify specific suffixes for alternative packaging options.

MJE170MJE170

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