MJE170G

Single Bipolar Transistors Overview

The MJE170G is a PNP silicon bipolar junction transistor manufactured by onsemi. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 40 V. The device has a power dissipation capacity of 12.5 W and operates within a temperature range of -65 °C to +150 °C. Key electrical parameters include a collector-base voltage of 60 V, an emitter-base voltage of 7 V, and a saturation voltage of 1.7 V. The gain-bandwidth product is 50 MHz with a minimum DC current gain of 50. It utilizes a TO-225-3 through-hole package.

Single Bipolar Transistors Feature Summary

• PNP polarity configuration for complementary circuit applications
• High thermal stability supporting operation up to 150 °C
• Robust 3 A continuous collector current capability
• Through-hole mounting for reliable mechanical attachment

Single Bipolar Transistors Applications

• Complementary output stages in audio amplifiers
• General-purpose switching circuits requiring PNP control
• Driver stages for power transistors
• Linear regulator output devices

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer marking and date code against official onsemi documentation to confirm authenticity. Ensure the TO-225-3 package dimensions match the design requirements. Check RoHS compliance status via the manufacturer's declaration. Confirm that the ordering suffix corresponds to the desired packaging format. Validate all electrical limits against the target application conditions before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 3 A current handling and 40 V breakdown is required. Consider the 12.5 W power dissipation limit and ensure adequate heat sinking is provided. Compare the 50 MHz transition frequency against the signal bandwidth needs. Evaluate the TO-225-3 package size constraints relative to the PCB layout. Verify compatibility with existing NPN counterparts like the MJE160G for balanced designs.

Single Bipolar Transistors Part Context

The MJE170G belongs to the MJE171 series of high-power PNP transistors from onsemi. This series is designed for robust performance in demanding electronic environments. The component serves as a standard solution for medium-power switching and linear regulation tasks. Its silicon construction ensures consistent electrical characteristics across the specified temperature range.

Single Bipolar Transistors Replacement Considerations

The MJE160G is the verified NPN counterpart within the same series. Other compatible replacements may include generic equivalents meeting identical 3 A, 40 V, and TO-225-3 specifications. Verify pinout compatibility and thermal resistance values before substitution.