MJE2955TG

Single Bipolar Transistors Overview

The MJE2955TG is a PNP silicon power transistor manufactured by onsemi, designed for general-purpose amplifier and switching applications. It features a collector-emitter voltage (VCEO) of 60 Vdc, a collector-base voltage (VCB) of 70 Vdc, and an emitter-base voltage (VEB) of 5.0 Vdc. The device supports a continuous collector current (IC) of 10 Adc with a total device dissipation (PD) of 75 W at a case temperature of 25 °C. Key electrical characteristics include a DC current gain (hFE) ranging from 20 to 100 at IC = 4.0 Adc, and a current-gain-bandwidth product (fT) of 2.0 MHz. Operating and storage junction temperatures range from -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• High current gain-bandwidth product suitable for switching and amplification
• Lead-free package compliant with RoHS standards

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Power switching applications

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix 'G' confirms the Pb-Free status as documented in the official datasheet. Confirm the package type matches TO-220 (Case 221A-09). Ensure compliance with environmental directives such as RoHS is required for the specific application context. Cross-reference the manufacturer part number MJE2955T/D with the requested component to ensure exact specification alignment before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a PNP silicon power transistor with 60 V collector-emitter voltage and 10 A continuous current capability is required. Consider the thermal resistance of 1.67 °C/W and the need for adequate heat sinking given the 75 W dissipation rating at 25 °C case temperature. Verify that the operating temperature range of -55 °C to +150 °C meets the environmental requirements of the target system.

Single Bipolar Transistors Part Context

The MJE2955TG belongs to the MJE2955T series of complementary silicon plastic power transistors produced by onsemi. It serves as the PNP counterpart to the NPN MJE3055T device. Both devices are engineered for similar general-purpose amplifier and switching roles within electronic circuits, offering matched performance characteristics for push-pull or complementary configurations.

Single Bipolar Transistors Replacement Considerations

The complementary NPN device in the same series is the MJE3055T. For lead-free variants, the MJE3055TG is the corresponding NPN option. Direct substitution requires verifying pinout compatibility and ensuring voltage and current ratings meet or exceed the original design specifications.