MKI100-12E8

MKI100-12E8

  • Description:IGBT MODULE 1200V 165A 640W E3
  • Series:-

SKU:254b1af0ee0d Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MODULE 1200V 165A 640W E3
  • Series:-
  • Mfr:IXYS
  • Package:Box
  • IGBT Type:NPT
  • Configuration:Full Bridge Inverter
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:E3
  • Supplier Device Package:E3
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):165 A
  • Power - Max:640 W
  • Current - Collector Cutoff (Max):1.4 mA
  • Input Capacitance (Cies) @ Vce:7.4 nF @ 25 V

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MKI100-12E8

Overview

The MKI100-12E8 is a six-pack IGBT module featuring NPT3 technology and HiPerFRED diodes. It provides a collector-emitter voltage of 1200 V, a continuous collector current of 165 A at 25°C case temperature, and a typical saturation voltage of 2.0 V. The module includes an isolated copper base plate with solderable pins for PCB mounting. Thermal resistance from junction to case is 0.19 K/W per IGBT and 0.3 K/W per diode. Operating junction temperature ranges from -40°C to +125°C.

Feature Summary

  • NPT3 IGBTs offer low saturation voltage and positive temperature coefficient for easy paralleling.
  • HiPerFRED diodes provide fast reverse recovery and low leakage current.
  • Industry standard package design with isolated copper base plate.

Applications

  • Motor control including DC motor armature and excitation windings
  • Synchronous motor excitation winding supply
  • Transformer primary winding power supplies
  • Welding equipment
  • X-ray systems

Procurement Notes

Verify the specific revision code E8 against official IXYS documentation before procurement. Confirm that the component meets RoHS compliance requirements if applicable to your manufacturing process. Ensure proper handling procedures are followed due to the sensitive semiconductor nature of the module. Check datasheet limits for mounting torque specifications to prevent mechanical damage during installation.

Selection Notes

Select this module for applications requiring high voltage isolation and robust short-circuit withstand capability. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values. Consider the gate charge characteristics when designing drive circuits for optimal switching performance. Verify that the peak repetitive current ratings align with the expected load conditions in the target application.

Part Context

The MKI100-12E8 belongs to the MKI series of six-pack IGBT modules manufactured by IXYS. This series is designed for industrial power conversion and motor drive applications. The module integrates three IGBTs and three free-wheeling diodes in a single package. It utilizes advanced NPT3 technology for improved reliability and switching performance compared to older generation devices.

Replacement Considerations

Check for direct replacements within the MKI or MWI series offering similar electrical ratings. Verify pin compatibility and thermal interface dimensions before substituting. Ensure that any alternative component meets the required voltage and current specifications for the intended circuit design.

MKI100-12E8MKI100-12E8

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