MKI75-12E8

MKI75-12E8

$68.58
  • Description:IGBT MODULE 1200V 130A 500W E3
  • Series:-

SKU:40d921e04274 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 1200V 130A 500W E3
  • Series:-
  • Mfr:IXYS
  • Package:Box
  • IGBT Type:NPT
  • Configuration:Full Bridge Inverter
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 75A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:E3
  • Supplier Device Package:E3
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):130 A
  • Power - Max:500 W
  • Current - Collector Cutoff (Max):1.1 mA
  • Input Capacitance (Cies) @ Vce:5.7 nF @ 25 V

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MKI75-12E8

Overview

The MKI75-12E8 is a six-pack insulated gate bipolar transistor (IGBT) module manufactured by IXYS. It integrates three NPT3 IGBTs and three HiPerFRED diodes in an industry-standard package with an isolated copper base plate. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 130 A at 25°C case temperature. Typical saturation voltage is 2.0 V, with a maximum operating junction temperature of 125°C. The module features short circuit withstand capability of 10 µs and square reverse biased safe operating area.

Feature Summary

  • NPT3 IGBT technology providing low saturation voltage and positive temperature coefficient for easy paralleling
  • HiPerFRED diode integration ensuring fast reverse recovery and low leakage current
  • Short circuit SOA capability supporting non-repetitive fault conditions
  • Square RBSOA design optimized for resonant circuit performance

Applications

  • Motor control systems including DC motor armature and excitation windings
  • AC drives and power supplies with power factor correction
  • Welding equipment and X-ray generators
  • Battery chargers and transformer primary winding supply

Procurement Notes

Verify component authenticity through authorized IXYS distributors or Littelfuse channels. Confirm the specific E8 suffix matches project requirements as it denotes lead-free solderability. Check datasheet revision history for updated thermal parameters. Ensure mounting torque specifications between 3 to 6 Nm are strictly followed during assembly to maintain electrical isolation integrity.

Selection Notes

Select this module for high-power applications requiring robust short-circuit tolerance and efficient switching. Evaluate thermal resistance values against heatsink capabilities to ensure junction temperatures remain within the 125°C limit. Consider the 10 µs short circuit duration when designing protection circuits. Verify that gate drive voltages align with the specified ±15 V operational range for optimal switching performance.

Part Context

This component belongs to the MWI/MKI 75-12 series of six-pack IGBT modules from IXYS. It shares architectural similarities with other devices in the lineup but differs in specific packaging and terminal configurations. The MKI variant typically targets motor control applications, while the MWI version is often used in AC drives. Both utilize the same core semiconductor die technology.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other IXYS six-pack modules only if pinout and thermal characteristics match exactly. Verify that any alternative device meets the 1200V rating and 130A current capacity requirements.

MKI75-12E8MKI75-12E8
$68.58
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