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The MMBD1503A is a small signal diode manufactured by onsemi, housed in an SOT-23 (TO-236) package. It features a maximum repetitive reverse voltage of 200 V and an average rectified forward current of 200 mA. The device supports a non-repetitive peak forward surge current of up to 2.0 A for short pulses. Electrical characteristics include a breakdown voltage of 200 V at 5.0 µA reverse current, with a forward voltage ranging from 620 mV to 720 mV at 1.0 mA. Total capacitance is specified at 4.0 pF under zero bias conditions.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct shipping configuration and marking codes. Confirm that the component meets all required environmental compliance standards for the intended deployment environment before finalizing procurement decisions.
Select this component when a compact silicon diode with high reverse voltage tolerance is required. Ensure the application current remains within the 200 mA average limit and verify that the operating temperature stays within the specified -55 °C to +150 °C range for reliable operation.
This part belongs to the MMBD150xA series of small signal diodes from onsemi. The series includes variants such as the MMBD1501A, MMBD1504A, and MMBD1505A, which share similar electrical profiles but differ in specific device markings and minor parametric tolerances defined in the datasheet.
MMBD1501A, MMBD1504A, MMBD1505A
Pin 1 is the Anode, Pin 2 is No Connection, and Pin 3 is the Cathode.
The maximum power dissipation is 350 mW at an ambient temperature of 25 °C.
At 150 °C, the reverse current increases; for example, it rises to 3.0 nA at 125 V reverse voltage compared to 1.0 nA at 25 °C.