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The MMBF102 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It features a single channel with enhancement mode operation and is designed for general-purpose applications. The device utilizes silicon technology and is housed in the SOT-23 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 60 V, a continuous drain current of 100 mA, and a gate-source cutoff voltage ranging from -0.5 V to -6 V. The typical forward transconductance is specified at 4 mS, with a maximum input capacitance of 5 pF. It operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific lot traceability requirements prior to procurement. Ensure storage conditions adhere to moisture sensitivity level guidelines to maintain device integrity during assembly processes.
Select this component when high input impedance and low noise performance are required in analog signal paths. Consider the SOT-23 package constraints for PCB layout. Evaluate thermal management needs based on the specified power dissipation limits and operating temperature range for the target application environment.
This part belongs to the MMBF series of small-signal JFETs from onsemi. It serves as a discrete semiconductor solution for analog circuit design, distinct from integrated MOSFETs or logic devices. The series provides standardized pinouts and electrical characteristics for interchangeable use in various electronic systems requiring field-effect transistor functionality.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical parameter overlaps with alternative JFETs before implementation.