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MMBF170Q-7-F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 60V 500MA SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for MMBF170Q-7-F
- Description：MOSFET N-CH 60V 500MA SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for MMBF170Q-7-F
Single FETs, MOSFETs Overview
The MMBF170Q-7-F is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 60 V and a continuous drain current (I_D) of 500 mA. The device exhibits a maximum static drain-source on-resistance (R_DS(on)) of 5.3 Ω at V_GS = 4.5 V and I_D = 50 mA, with a gate threshold voltage (V_GS(th)) ranging from 0.8 V to 3.0 V. Total power dissipation is rated at 300 mW, and the operating temperature range spans from -55 °C to +150 °C. Switching characteristics include turn-on and turn-off times of approximately 10 ns.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for efficient conduction
- Fast switching speed capabilities
- Qualified to AEC-Q101 standards for high reliability
- Totally lead-free and fully RoHS compliant
Single FETs, MOSFETs Applications
- Automotive electronic circuits requiring AEC-Q101 qualification
- General-purpose low-side switching applications
- Power management systems utilizing SOT23 packaging
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the received parts match the specified marking codes and date codes. Ensure storage conditions adhere to moisture sensitivity level requirements. Validate compliance with environmental directives prior to integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V N-channel MOSFET with moderate current handling is required in a compact SOT23 package. Consider the specific R_DS(on) values at intended gate drive voltages. Evaluate thermal performance against system power dissipation limits. Verify compatibility with automotive reliability standards if applicable.
Single FETs, MOSFETs Part Context
This part belongs to the MMBF170 series of N-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a standard SOT23 surface-mount case. The product line emphasizes low input capacitance and leakage currents suitable for general switching tasks.
Single FETs, MOSFETs Replacement Considerations
MMBF170Q-13-F offers identical electrical specifications but differs in packaging quantity, supplied in 10,000 units per tape and reel instead of 3,000.
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