MMBF4392LT1

MMBF4392LT1

  • Description:JFET SS N-CHAN 30V SOT23
  • Series:*

SKU:45a04c83a89b Category: Brand:

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Product Detailed Parameters

  • Description:JFET SS N-CHAN 30V SOT23
  • Series:*
  • Mfr:onsemi
  • Package:Cut Tape (CT)
  • FET Type:-
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):-
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Resistance - RDS(On):-
  • Power - Max:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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MMBF4392LT1

Overview

The MMBF4392LT1G is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It operates within a Drain-Source Voltage (VDS) range of up to 30 Vdc and supports a Forward Gate Current (IG(f)) of 50 mAdc. The device features a Zero-Gate-Voltage Drain Current (IDSS) ranging from 25 to 75 mAdc at VDS = 15 Vdc. Static Drain-Source On-Resistance (rDS(on)) is specified between 30 and 60 Ohms at ID = 1.0 mAdc. The component is housed in a SOT-23 package with three pins, supporting a total device dissipation of 225 mW and operating temperatures from -55°C to +150°C.

Feature Summary

  • Single N-channel JFET configuration designed for switching applications
  • SOT-23 surface-mount packaging for compact circuit integration
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant construction

Applications

  • Electronic switching circuits
  • Signal routing and multiplexing
  • Low-noise amplifier input stages

Procurement Notes

Verify the specific ordering suffix 'G' indicates Pb-Free packaging when sourcing this component. Confirm that the requested part number matches the exact electrical characteristics required for your application, particularly the IDSS range of 25 to 75 mAdc. Ensure compatibility with the SOT-23 footprint during PCB layout. Check for any automotive-specific requirements if AEC-Q101 qualification is necessary for your project.

Selection Notes

Select the MMBF4392LT1G when a moderate zero-gate-voltage drain current between 25 and 75 mAdc is required. This model offers a balance between the higher current of the MMBF4391 and the lower current of the MMBF4393. Consider the static on-resistance range of 30 to 60 Ohms for voltage drop calculations. The 30 V breakdown voltage makes it suitable for low-voltage signal processing tasks.

Part Context

This component belongs to the MMBF4391L, MMBF4392L, and MMBF4393L family of N-channel JFET switching transistors. All devices share identical maximum ratings and thermal characteristics but differ in their IDSS and rDS(on) specifications. The MMBF4392 variant provides intermediate performance characteristics compared to its siblings in the series.

Replacement Considerations

MMBF4391LT1G and MMBF4393LT1G are electrically similar variants within the same family. Substitution requires verifying that the target IDSS and rDS(on) ranges of the replacement part align with the original circuit design requirements.

MMBF4392LT1MMBF4392LT1

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