SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MMBF4416 is an N-channel RF amplifier JFET manufactured by onsemi, formerly Fairchild Semiconductor. It operates in a SOT-23 surface-mount package with three pins. The device supports a drain-gate voltage of 30 V and a gate-source voltage of -30 V. Electrical characteristics include a zero-gate voltage drain current (IDSS) ranging from 5 mA to 15 mA at VDS = 15 V. Small signal performance at 1 MHz includes input capacitance of 4 pF and reverse transfer capacitance of 0.9 pF. Functional parameters measured at 100 MHz show a noise figure of 2 dB and common source power gain of 18 dB. Total device dissipation is rated at 225 mW.
Verify the specific ordering suffix against the official ON Semiconductor website to ensure compliance with system requirements following the Fairchild integration. Confirm that the part number does not contain underscores, as these are replaced by dashes in current nomenclature. Check for updated marking layouts via Product Change Notices. Ensure sourcing from authorized distributors to guarantee traceability and authenticity.
Select this component for low-noise RF amplification tasks requiring high power gain. Verify that the required IDSS range of 5 mA to 15 mA aligns with circuit biasing needs. Ensure the operating frequency falls within the validated small-signal characteristic ranges. Consider the thermal resistance of 556 °C/W when designing heat dissipation strategies for the SOT-23 package.
This device was originally produced by Fairchild Semiconductor and is now part of the ON Semiconductor portfolio. The datasheet indicates it is sourced from process 50. It belongs to the family of N-channel RF amplifiers. The product status is listed as full production in the provided documentation.
MMBF4416A
The absolute maximum drain-gate voltage is 30 V.
The typical noise figure is 2 dB when VDS is 15 V, ID is 5 mA, Rg is 100 Ω, and f is 100 MHz.
The input capacitance (Ciss) is typically 4 pF at VDS = 15 V, VGS = 0, and f = 1 MHz.