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Product Detailed Parameters
- Description：JFET N-CH 25V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：7pF @ 15V
- Resistance - RDS(On)：-
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The MMBF5458 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It operates in depletion mode and is housed in a SOT-23 surface-mount package. The device supports a maximum drain-source voltage of 25 V and dissipates up to 350 mW of power. Key electrical characteristics include a maximum reverse transfer capacitance of 3 pF, a maximum operating temperature of 150 °C, and compliance with lead-free manufacturing standards.
Feature Summary
- N-channel JFET technology designed for depletion mode operation
- Compact SOT-23 surface-mount packaging for space-constrained designs
- Capable of handling junction temperatures up to 150 °C
Applications
- Low-noise amplifier circuits
- Impedance conversion stages
- Analog switch implementations
- Chopper applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm exact tape-and-reel specifications or marking codes. Confirm RoHS compliance status through current manufacturer declarations. Ensure the selected variant matches the required thermal and electrical ratings for the target application environment before finalizing procurement.
Selection Notes
Select this component when a compact N-channel JFET is required for low-voltage analog signal processing. The 25 V rating suits general-purpose switching and amplification tasks. Evaluate the 350 mW power dissipation limit against thermal constraints. Consider the SOT-23 footprint for PCB layout compatibility.
Part Context
This device belongs to onsemi's discrete semiconductor transistor portfolio. It serves as a fundamental active component for analog circuit design. The part is distinct from MOSFETs and digital transistors within the same catalog, specifically addressing JFET requirements for impedance matching and signal conditioning.
Replacement Considerations
Consult official substitution guides for verified equivalents. Generic replacements may differ in capacitance or breakdown voltage. Verify pinout compatibility and thermal performance before integrating alternative components into existing designs.
