MMBF5485

Overview

The onsemi MMBF5485 is an N-Channel RF Amplifier designed primarily for electronic switching applications, such as low On Resistance analog switching. Sourced from Process 50 technology, it utilizes a SOT-23 package where the source and drain terminals are interchangeable. The device operates within a junction temperature range of −55 to +150 °C. Key electrical characteristics include a Gate-Source Cutoff Voltage (VGS(off)) ranging from −0.5 V to −4.0 V at VDS = 15 V and ID = 10 nA. The Zero-Gate Voltage Drain Current (IDSS) ranges from 4.0 mA to 10 mA under standard test conditions.

Feature Summary

• Designed for electronic switching applications including low On Resistance analog switching
• Features interchangeable source and drain terminals in the SOT-23 package
• Sourced from Process 50 technology

Applications

• Electronic switching applications
• Low On Resistance analog switching

Procurement Notes

Verify component authenticity through authorized channels due to discontinuation status. Confirm specific lot codes against current manufacturing records. Ensure compliance with RoHS directives if applicable to the production environment. Validate storage conditions to maintain device integrity prior to assembly.

Selection Notes

Select based on required cutoff voltage and drain current specifications. Verify thermal resistance requirements for the intended PCB layout. Consider frequency response characteristics for RF amplifier suitability. Evaluate interchangeability of source and drain pins for circuit design flexibility.

Part Context

Part of the MMBF5484/5485/5486 series of N-Channel RF amplifiers. Manufactured by onsemi using Process 50 technology. Available in SOT-23 packages with interchangeable source and drain terminals. Designed for electronic switching and analog switching applications.

Replacement Considerations

MMBF5484 and MMBF5486 are direct functional equivalents within the same series. Verify pinout compatibility and parameter matching before substitution.