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Product Detailed Parameters
- Description：JFET P-CH 30V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：250 Ohms
- Power - Max：225 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The MMBFJ176 is a P-Channel Junction Field Effect Transistor (JFET) manufactured by onsemi. It is designed for low-level analog switching applications, including sample-and-hold circuits and chopper-stabilized amplifiers. The device is available in SOT-23 (TO-236) surface-mount packaging. Key electrical characteristics include a Gate-Source Breakdown Voltage of 30 V, a Gate-Source Cut-Off Voltage range of 1.0 V to 4.0 V, and a Zero-Gate Voltage Drain Current range of -2.0 mA to -25.0 mA at VDS = -15 V. The maximum total device dissipation is 225 mW, with an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- Designed specifically for low-level analog switching tasks such as sample-and-hold circuits and chopper-stabilized amplifiers.
- Features interchangeable source and drain terminals in the SOT-23 package configuration.
- Constructed using silicon process technology suitable for general-purpose discrete semiconductor applications.
Applications
- Sample-and-hold circuits
- Chopper-stabilized amplifiers
- Low-level analog switching
Procurement Notes
Verify the specific package variant required, as the J176 series includes both TO-92 and SOT-23 configurations. Confirm that the ordering suffix matches the desired packing method, such as tape and reel for the MMBFJ176. Ensure compatibility with the target PCB land pattern size, particularly for the SOT-23 footprint. Check for any recent product change notifications regarding manufacturing site or material composition updates.
Selection Notes
Select the MMBFJ176 when a P-Channel JFET with moderate drain current capability and low gate leakage is required for analog signal paths. Consider the specific VGS(off) binning if precise cutoff voltage control is necessary for the application. Evaluate thermal constraints carefully, as the SOT-23 package has a lower power dissipation rating compared to through-hole alternatives. Verify that the 30 V breakdown voltage meets the circuit's peak voltage requirements.
Part Context
The MMBFJ176 belongs to the J175/J176/J177 family of P-Channel Switches produced by onsemi. This family shares similar functional descriptions but may vary in specific electrical parameter ranges or physical packaging options. The component is part of onsemi's broader portfolio of discrete semiconductors used in industrial, consumer, and automotive electronics markets.
Replacement Considerations
Direct substitutes within the same family include the J176 (TO-92 package). Other P-Channel JFETs in the MMBFJ series may serve as functional replacements if pinout and electrical parameters align, though specific Idss and VGS(off) ranges must be verified against the new component's datasheet.
