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Product Detailed Parameters
- Description：JFET N-CH 40V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：4 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：2 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The MMBFJ203 is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by onsemi. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device features a gate-source breakdown voltage of -40 V. It is designed for applications requiring low noise and high impedance characteristics typical of JFETs.
Feature Summary
- Single N-channel configuration
- Silicon semiconductor technology
- Surface-mount SOT-23-3 packaging
Applications
- Low-noise amplifier circuits
- Impedance conversion stages
- Analog switch implementations
- Chopper applications
Procurement Notes
Verify component status as the MMBFJ203 is listed as obsolete or discontinued by the manufacturer. Confirm availability through authorized distributors or secondary market channels, as standard supply may be restricted. Ensure compatibility with existing designs before sourcing replacement units from alternative suppliers.
Selection Notes
Select this component for designs requiring a discrete N-channel JFET in a compact SOT-23-3 footprint. Consider the -40 V gate-source breakdown rating when designing biasing networks. Verify that the single-transistor configuration meets the circuit requirements without needing additional external components for basic operation.
Part Context
This part belongs to the JFET product category within onsemi's discrete semiconductor portfolio. JFETs are commonly used in analog signal processing due to their high input impedance and low noise performance. The MMBFJ203 specifically addresses needs for small-form-factor N-channel amplification or switching solutions.
Replacement Considerations
- NSVJ6904DSB6
- NSVJ5908DSG5
FAQ
What is the maximum gate-source breakdown voltage for the MMBFJ203?
The maximum gate-source breakdown voltage is -40 V.
Which package type does the MMBFJ203 use?
It uses an SOT-23-3 surface-mount package.
Is the MMBFJ203 available in a dual configuration?
No, it is a single N-channel JFET.
