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Product Detailed Parameters
- Description：RF MOSFET JFET SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：JFET
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：40mA
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：25 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Configuration：N-Channel
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Overview
The MMBFJ212 is an RF small signal junction field-effect transistor (JFET) manufactured by onsemi. It is a single-element, N-channel device designed for very high frequency band applications. The component utilizes silicon technology and operates in depletion mode. It is housed in a plastic epoxy SOT-23 surface-mount package with three terminals. The device is lead-free and RoHS compliant, featuring a moisture sensitivity level of 1.
Feature Summary
- Designed for RF small signal applications in the very high frequency band
- N-channel junction FET configuration operating in depletion mode
- Compact SOT-23 surface-mount package suitable for automated assembly
Applications
- RF small signal amplification
- Very high frequency circuit switching
- General-purpose JFET applications requiring compact packaging
Procurement Notes
Verify the manufacturer origin carefully, as official documentation may list Rochester Electronics as the distributor rather than onsemi directly. Confirm that the specific unit matches the original onsemi specifications and does not contain unauthorized modifications. Ensure compliance with RoHS and lead-free requirements if mandated by the end application standards.
Selection Notes
Select this component when a small-signal N-channel JFET is required for VHF circuits. The SOT-23 package offers space efficiency compared to through-hole alternatives. Verify that the depletion mode operation aligns with the circuit design requirements, as it conducts current at zero gate-source voltage.
Part Context
This part belongs to the family of RF small signal field-effect transistors. It serves as a discrete semiconductor component within the broader category of junction FETs. The device is distinct from power MOSFETs or logic-level transistors due to its specific RF performance characteristics and low-power signal handling capabilities.
Replacement Considerations
Consider the MMBFJ202 as a potential substitute, as it shares similar N-channel JFET characteristics and general-purpose classification. Verify pinout compatibility and electrical parameter tolerances before implementation.
