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The MMBFU310LT1 is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by onsemi, designed for VHF and UHF amplifier applications. It is housed in a surface-mount SOT-23-3 package. The device features a drain-source breakdown voltage of 25 V and a gate-source breakdown voltage of 25 V. The zero-gate-voltage drain current ranges from 24 mA to 60 mA. Constructed using silicon technology, this single-configured transistor is intended for high-frequency signal processing tasks within electronic circuits.
Verify the exact part number against official manufacturer documentation, as standard listings often reference MMBFJ310LT1G or MMBFJ310LT1. Confirm that the 'U' variant matches the required electrical specifications for your design. Ensure compatibility with SOT-23-3 footprints and validate RoHS compliance status through the supplier's certified datasheet before integration.
Select this component when designing circuits requiring N-Channel JFETs for VHF/UHF amplification. Verify that the 25 V breakdown ratings and 24-60 mA drain current range meet system requirements. Ensure the SOT-23-3 package fits the board layout constraints. Cross-reference with MMBFJ310 series variants if specific suffix differences impact availability or minor parameter tolerances.
This component belongs to the MMBFJ310L series of N-Channel JFETs produced by onsemi. These transistors are specifically engineered for radio frequency applications, offering reliable performance in compact surface-mount packages. The series is widely used in communication equipment and RF signal chains where low noise and stable gain at high frequencies are critical.
Public confirmed substitute part numbers: MMBFJ310LT1G, MMBFJ310LT1.