MMBT2907AT-7-F

Single Bipolar Transistors Overview

The MMBT2907AT-7-F is a PNP small signal surface mount transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction and operates within a collector-emitter voltage range of -60V and a continuous collector current of -600mA. The device dissipates up to 150mW of power with a junction-to-ambient thermal resistance of 833°C/W. Electrical characteristics include a DC current gain (hFE) ranging from 75 to 300, a transition frequency (fT) of 200MHz, and saturation voltages of -1.6V at 500mA. It functions reliably across an operating temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Utilizes epitaxial planar die construction for robust performance in surface mount applications.
• Provides complementary NPN type availability through the MMBT2222AT series.
• Designed as a totally lead-free and fully RoHS compliant green device.

Single Bipolar Transistors Applications

• General purpose switching circuits
• Low power amplification stages
• Complementary pairs with MMBT2222AT

Single Bipolar Transistors Procurement Notes

Verify the specific datasheet revision against your design requirements before finalizing procurement. Confirm that the -F suffix correctly denotes the lead-free matte tin finish plating intended for your assembly process. Ensure the SOT-523 package dimensions align with your PCB footprint layout. Cross-reference the date code marking format to verify manufacturing timelines.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP transistor is required for low-power applications. The SOT-523 package offers space efficiency compared to larger alternatives. Consider the 150mW power dissipation limit and thermal resistance when designing heat management strategies. Verify that the -60V breakdown voltage meets the circuit's maximum operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the MMBT2907AT family of small signal transistors produced by Diodes Incorporated. It is specifically designed for surface mount technology (SMT) processes. The device serves as the PNP counterpart to the MMBT2222AT NPN transistor, allowing for matched complementary pairs in push-pull or differential amplifier configurations.

Single Bipolar Transistors Replacement Considerations

MMBT2222AT-7-F

Single Bipolar Transistors FAQ

What does the -F suffix indicate on the MMBT2907AT-7-F?

The -F suffix indicates that the device has lead-free terminal plating with a matte tin finish.

What is the maximum DC current gain (hFE) specified for this transistor?

The maximum DC current gain (hFE) is 300, measured under specific test conditions such as IC = -100µA and VCE = -10V.

Is there a complementary NPN transistor available in the same package?

Yes, the MMBT2222AT is the complementary NPN type available in the same ultra-small surface mount package.