MMBT5401WT1G

Single Bipolar Transistors Overview

The MMBT5401WT1G is a single PNP bipolar junction transistor manufactured by onsemi, designed for high-voltage switching applications. It utilizes silicon technology and is housed in an SOT-323-3 surface-mount package. The device supports a maximum DC collector current of 500 mA and withstands a collector-emitter voltage (VCEO) of 150 V, with a collector-base voltage (VCBO) rating of 160 V. Key electrical parameters include a gain-bandwidth product (fT) of 300 MHz, a power dissipation capacity of 400 mW, and a collector-emitter saturation voltage of 500 mV. The component operates within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High voltage capability with 150 V collector-emitter breakdown rating
• Optimized for high-speed switching with 300 MHz transition frequency
• Compact SOT-323-3 surface-mount footprint for space-constrained designs

Single Bipolar Transistors Applications

• General-purpose high-voltage switching circuits
• Driver stages for relays and solenoids
• Logic level translation interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'WT1G' against official onsemi documentation to confirm the exact reel packaging configuration and tape-and-reel specifications. Ensure that the SOT-323-3 pinout matches the target schematic, as variations can exist between manufacturers. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents prior to finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP transistor is required for high-voltage environments exceeding standard low-voltage logic levels. The 500 mA current rating and 400 mW power dissipation make it suitable for driving moderate loads. Compare the SOT-323-3 package dimensions against available board space constraints. Evaluate the 300 MHz bandwidth requirement against the circuit's switching speed needs to ensure adequate performance margins.

Single Bipolar Transistors Part Context

This part belongs to the MMBT5401W series of high-voltage PNP transistors from onsemi. It shares core electrical characteristics with other variants in the family but differs in packaging and manufacturing lot specifications. The SOT-323-3 package provides a smaller form factor compared to traditional SOT-23 packages, facilitating higher density PCB layouts while maintaining similar thermal and electrical performance profiles for general-purpose applications.

Single Bipolar Transistors Replacement Considerations

Cross-reference with MMBT5401LT1G for alternative sourcing options, noting potential differences in power dissipation ratings and automotive qualification status.