MMBT7002KDW

FET, MOSFET Arrays Overview

The Diotec Semiconductor MMBT7002KDW is a dual N-channel enhancement mode MOSFET housed in an SOT-363 surface-mount package. It features two independent FETs within a single compact footprint, designed for signal processing and logic level conversion. The device supports a drain-source voltage of 60 V and a continuous drain current of 300 mA per channel. Key electrical parameters include a maximum on-state resistance of 4 Ω at VGS = 5 V and 3 Ω at VGS = 10 V. Total power dissipation reaches 350 mW under standard mounting conditions, with a junction temperature range spanning from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

• Dual FET configuration integrating two independent N-channel MOSFETs into a single SOT-363 package
• ESD protected gate structure providing robustness against electrostatic discharge events
• Compliant with RoHS directives without exemptions and adheres to REACH regulations regarding conflict minerals

FET, MOSFET Arrays Applications

• Signal processing circuits
• Logic level converters
• Driver stages

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when sourcing this component. The base model represents commercial grade performance. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm that the delivered part matches the required automotive or commercial specification before integration into the design.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual switching functions within a minimal board area. Ensure the driving circuit can supply sufficient gate voltage to achieve the specified low on-state resistance values. Consider the thermal resistance characteristics when determining heat dissipation requirements for high-frequency switching applications.

FET, MOSFET Arrays Part Context

This component belongs to the broader 2N700X family of general-purpose N-channel MOSFETs. While sharing similar functional roles with single-channel variants like the 2N7002, the MMBT7002KDW distinguishes itself by offering dual isolation within a single surface-mount package. This makes it suitable for applications where space constraints necessitate multiple switching elements.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the SOT-363 package and dual FET architecture. Verify that substitute components meet the 60V drain-source voltage rating and provide comparable on-state resistance at the intended drive voltages. Cross-compatibility should be confirmed through detailed datasheet comparison rather than assumed based on pinout alone.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for each channel?

Each channel supports a continuous drain current (ID) of 300 mA.

How does the gate-source voltage rating differ between DC and ESD conditions?

The maximum DC gate-source voltage is ±20 V, while the device can withstand an ESD voltage of ±2 kV.

What is the typical turn-on delay time for this device?

The typical turn-on delay time (td(on)) is 2.7 ns under standard test conditions.