Single Bipolar Transistors MMBTA63LT1G product image

MMBTA63LT1G

$0.17
  • Description:TRANS PNP DARL 30V 0.5A SOT23-3
  • Series:-

SKU:4bde4b16d64e Category: Brand:

  
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MMBTA63LT1G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP DARL 30V 0.5A SOT23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MMBTA63LT1G

  • Description:TRANS PNP DARL 30V 0.5A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:5000 @ 100mA, 5V
  • Power - Max:225 mW
  • Frequency - Transition:125MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MMBTA63LT1G

MMBTA63LT1G

Single Bipolar Transistors Overview

The MMBTA63LT1G is a PNP Darlington transistor manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a maximum DC collector current of 500 mA and a collector-emitter voltage rating of 30 V. The device has a power dissipation capacity of 225 mW and operates within a temperature range from -55 °C to +150 °C. Key electrical parameters include a collector-base voltage of 30 V, an emitter-base voltage of 10 V, and a minimum DC current gain (hFE) of 10,000.

Single Bipolar Transistors Feature Summary

  • High current gain capability suitable for sensitive signal amplification
  • Compact SOT-23 footprint for space-constrained designs
  • Wide operating temperature range for industrial environments

Single Bipolar Transistors Applications

  • General-purpose switching applications
  • Signal amplification circuits
  • Driver stages for relays or LEDs

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm availability and authenticity before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required in a small surface-mount package. Consider the 30 V voltage limit and 500 mA current capacity relative to circuit demands. Evaluate thermal management needs given the 225 mW power dissipation limit in the SOT-23 enclosure. Compare against alternative Darlington configurations if higher voltage ratings are necessary.

Single Bipolar Transistors Part Context

This part belongs to the MMBTA series of bipolar junction transistors from onsemi. The series includes various NPN and PNP variants optimized for low-power switching and amplification. The MMBTA63LT1G specifically addresses applications requiring PNP polarity with high gain characteristics in a compact form factor.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference guides for verified substitutes. Potential alternatives may include other PNP Darlington transistors in SOT-23 packages with comparable voltage and current ratings. Verify pinout compatibility and electrical parameter overlaps before substitution.

MMBTA63LT1GMMBTA63LT1G
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