MMBTH10-4LT1G

Overview

The MMBTH10-4LT1G is a silicon NPN bipolar junction transistor from onsemi, housed in a surface-mount SOT-23-3 package. It features a maximum collector-emitter voltage of 25V and a collector-base voltage of 30V. The device supports a minimum DC current gain (hFE) of 60 and offers a transition frequency (fT) of 650MHz. Power dissipation is rated at 225mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

• High-speed VHF performance with a 650MHz transition frequency for mixer applications
• Compact SOT-23-3 surface-mount packaging for space-constrained designs
• Wide thermal operating range supporting -55°C to +150°C environments

Applications

• VHF signal mixing circuits
• General-purpose switching applications
• RF amplifier stages

Procurement Notes

Verify component authenticity through authorized channels due to the manufacturer's scheduled obsolescence notice. Confirm that the specific suffix matches the required electrical characteristics, as ordering variations may exist. Ensure compliance with RoHS standards before integration into final assemblies.

Selection Notes

Select this component for high-frequency VHF requirements where low voltage operation is necessary. The 650MHz fT distinguishes it from standard general-purpose transistors. Consider the 225mW power limit and thermal management needs within the small SOT-23 footprint during circuit design.

Part Context

This part belongs to the MMBTH10L series of NPN transistors designed by onsemi. It shares the physical SOT-23-3 form factor with other devices in the family but is optimized for higher frequency operations compared to standard low-frequency counterparts, targeting specific RF and VHF use cases.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the stated obsolescence status, alternative sourcing should be evaluated carefully against the original specifications.