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Product Detailed Parameters
- Description：RF TRANS NPN 40V 450MHZ SOT-23-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：40V
- Frequency - Transition：450MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 1mA, 6V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The MMBTH10RG is an NPN bipolar RF transistor manufactured by Fairchild Semiconductor. It features a maximum collector-emitter voltage of 40V and a continuous collector current rating of 50mA. The device operates with a transition frequency of 450MHz and dissipates up to 225mW of power. It is housed in a surface-mount SOT-23-3 package, designed for high-frequency applications requiring low noise performance.
Feature Summary
- Designed for low noise UHF/VHF amplifier applications
- Optimized for common emitter operation with collector currents ranging from 100 µA to 20 mA
Applications
- Low noise UHF amplifiers
- Low noise VHF amplifiers
- High frequency signal processing circuits
Procurement Notes
Verify component status carefully as the MMBTH10RG is listed as obsolete and not in production by Fairchild Semiconductor. Sourcing may require checking secondary market distributors or confirming availability through ON Semiconductor archives. Ensure datasheet revisions match specific design requirements before procurement.
Selection Notes
Select this component for designs requiring NPN RF transistors with 40V breakdown and 450MHz transition frequency in compact SOT-23-3 packages. Consider its suitability for low noise applications within the specified 100 µA to 20 mA collector current range. Evaluate alternative active components if production continuity is critical due to the obsolete status.
Part Context
This part belongs to the Fairchild Semiconductor Bipolar RF Transistor family. It is specifically engineered for radio frequency environments where low noise figures are essential. The device represents a discrete solution for amplification tasks in the UHF and VHF bands, distinct from integrated RF ICs.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, engineers must identify equivalent NPN RF transistors with matching 40V, 50mA, and 450MHz specifications from other manufacturers or newer Fairchild/ON Semiconductor product lines.
FAQ
What is the maximum collector current for the MMBTH10RG?
The maximum continuous collector current is 50mA.
Is the MMBTH10RG suitable for low noise applications?
Yes, it is explicitly designed for use in low noise UHF/VHF amplifiers.
