MMBV109LT3G

Overview

The MMBV109LT3G is a silicon epitaxial varactor diode designed for general frequency control and tuning applications, serving as a solid-state replacement for mechanical tuning methods. It operates within a reverse voltage range of up to 30 Vdc and supports a forward current of 200 mAdc. The device features a capacitance range of 26–32 pF at 3.0 Vdc and 1.0 MHz, with a figure of merit exceeding 200 at 50 MHz. It utilizes an SOT-23 (TO-236) surface-mount package.

Feature Summary

• High Q factor with guaranteed minimum values at VHF frequencies
• Controlled and uniform tuning ratio for precise frequency control
• Surface mount packaging for compact circuit integration

Applications

• General frequency control circuits
• Solid-state tuning replacements for mechanical methods
• VHF frequency variable capacitance applications

Procurement Notes

Verify the ordering suffix 'LT3G' corresponds to the specific tape-and-reel quantity and lead-free compliance status required for your assembly process. Confirm that the SOT-23 package dimensions match your PCB footprint design constraints before finalizing procurement orders.

Selection Notes

Select this component when a high-Q varactor diode is needed for VHF tuning applications requiring a small surface-mount footprint. Ensure the operating reverse voltage remains below 30 Vdc and verify that the 26–32 pF capacitance range meets the specific frequency control requirements of the target circuit design.

Part Context

This part belongs to the MMBV109 series of silicon epitaxial varactor diodes manufactured by ON Semiconductor. The LT3G suffix indicates a specific packaging configuration and material compliance standard within the broader product family, distinguishing it from other variants like the LT1 or MV209 through-package options.

Replacement Considerations

Direct substitutes include the MMBV109LT1 and MMBV109LT3. Verify pinout compatibility and electrical parameter alignment before swapping packages.