SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MMBV2101LT1G is a silicon tuning diode from the MMBV2101L series, designed for high-volume FM radio and TV tuning applications. It provides solid-state reliability as a replacement for mechanical tuning methods. The device features a standard capacitance tolerance of 10% and controlled tuning ratios. Key electrical characteristics include a reverse voltage rating of 30 Vdc, a forward current capacity of 200 mAdc, and a maximum power dissipation of 225 mW at 25°C. The junction temperature range extends up to +150°C. At 4.0 Vdc and 1.0 MHz, the typical diode capacitance is 6.8 pF with a minimum tuning ratio of 2.5.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm the presence of Pb-free markings on the package surface. Ensure the ordering suffix matches the required packaging format, such as tape and reel quantities. Validate that the specific lot code aligns with current production standards before finalizing acquisition.
Select this component when a single varactor diode with approximately 6.8 pF nominal capacitance is required. Verify that the 30 V reverse voltage rating meets the circuit's peak bias requirements. Consider the SOT-23 package dimensions for PCB layout constraints. Ensure the application operates within the specified -55°C to +150°C storage temperature range.
This part belongs to the MMBV2101L series of silicon tuning diodes manufactured by onsemi. The series includes variants with different capacitance values ranging from 6.8 pF to 33 pF, all sharing similar electrical characteristics and package options. The 'G' suffix indicates a lead-free package compliant with environmental standards.
Direct replacements within the same series include MMBV2101L and MV2101. Cross-package equivalents are available in TO-92 form factors. Verify pinout compatibility, specifically Anode at Pin 1 and Cathode at Pin 3 for the SOT-23 configuration.