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The MMBV2107LT1G is a silicon tuning diode from the MMBV2101LT1 series, designed for FM radio and TV tuning applications. It provides solid-state reliability as a replacement for mechanical tuning methods. The device features a standard capacitance tolerance of 10% and controlled uniform tuning ratios. It operates with a maximum reverse voltage of 30 Vdc and a forward current of 200 mAdc. The typical diode capacitance at 4.0 Vdc is 22 pF, ranging from 19.8 to 24.2 pF. The figure of merit (Q) is typically 350 at 50 MHz. The tuning ratio (C2/C30) ranges from 2.5 to 3.2.
Verify the specific ordering suffix 'T1' indicates tape and reel packaging when sourcing this component. Confirm the presence of the 'G' suffix or microdot symbol if Pb-free compliance is required for the assembly process. Ensure the device code matches the specified marking diagram for accurate identification upon receipt.
Select the MMBV2107LT1G when a nominal capacitance of approximately 22 pF is required for the tuning circuit. Consider the SOT-23 surface mount package for board space optimization compared to through-hole alternatives. Evaluate the Q factor and tuning ratio specifications against the specific requirements of the RF application to ensure adequate performance.
This component belongs to the MMBV2101LT1 series of silicon tuning diodes manufactured by onsemi. The series includes various capacitance values to suit different tuning needs while maintaining consistent electrical characteristics across the family. These devices are engineered to replace mechanical tuning capacitors in high-volume consumer electronics.
MMBV2107L
Pin 1 is the Anode, Pin 2 is No Connection, and Pin 3 is the Cathode.
The tuning ratio is defined as the ratio of the diode capacitance measured at 2.0 Vdc divided by the capacitance measured at 30 Vdc.
The maximum junction temperature is +150 °C.