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Product Detailed Parameters
- Description：DIODE TUNING SS 20V SOT-23
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Capacitance @ Vr, F：32pF @ 3V, 1MHz
- Capacitance Ratio：1.9
- Capacitance Ratio Condition：C3/C8
- Voltage - Peak Reverse (Max)：20 V
- Diode Type：Single
- Q @ Vr, F：200 @ 3V, 50MHz
- Operating Temperature：125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMBV409LT1G is a dual NPN bipolar junction transistor (BJT) manufactured by onsemi. It is housed in the SOT-363 surface-mount package, which integrates two independent NPN transistors in a single compact form factor. The device is designed for general-purpose switching and amplification applications. Key electrical characteristics include a collector-emitter voltage rating of 45 V and a continuous collector current capability of 100 mA per transistor. The component operates within a temperature range from -55°C to +150°C, ensuring reliability in various environmental conditions.
Feature Summary
- Dual NPN configuration in a single compact SOT-363 package
- High thermal stability with extended operating temperature range
- General-purpose switching and amplification capabilities
Applications
- General-purpose signal switching
- Low-power amplification circuits
- Digital logic interface buffers
Procurement Notes
Verify the complete part number includes the 'G' suffix for lead-free compliance when ordering. Confirm the specific tape and reel quantity requirements with the distributor or manufacturer representative prior to purchase. Ensure the sourcing channel provides original manufacturer documentation to guarantee component authenticity and traceability.
Selection Notes
Select this component when space-constrained designs require two independent NPN transistors. The SOT-363 package offers a small footprint suitable for dense PCB layouts. Consider the 45 V breakdown voltage and 100 mA current limits to ensure adequate headroom for the intended circuit operation.
Part Context
This component belongs to onsemi's portfolio of small-signal bipolar junction transistors. It is commonly used in consumer electronics and industrial control systems where multiple low-power switching elements are needed in a minimal board area. The dual configuration simplifies assembly compared to using discrete single transistors.
Replacement Considerations
Consult official cross-reference data for compatible alternatives. Potential substitutes may include other dual NPN BJTs in SOT-363 packages with matching voltage and current ratings. Verify pinout compatibility and thermal performance before implementing any replacement.
FAQ
What is the maximum collector-emitter voltage for the MMBV409LT1G?
The maximum collector-emitter voltage (VCEO) is 45 V.
How many transistors are integrated in the MMBV409LT1G package?
The device contains two independent NPN transistors within a single SOT-363 package.
What is the maximum continuous collector current per transistor?
Each transistor can handle a continuous collector current of up to 100 mA.
