MMDF1N05ER2G

FET, MOSFET Arrays Overview

The MMDF1N05ER2G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It features a SOIC-8 surface-mount package and operates with a drain-source voltage of 50 V and a continuous drain current of 1.7 A at 25°C. The device exhibits a maximum on-resistance of 300 mΩ at a gate-source voltage of 10 V. It supports a gate-source voltage range of ±20 V and handles up to 2 W of power dissipation. The component functions within a temperature range of -55°C to +150°C junction temperature, utilizing silicon technology for standard switching applications.

FET, MOSFET Arrays Feature Summary

• Dual configuration providing two independent N-channel enhancement mode transistors in a single compact package.
• Low on-resistance design optimized for efficient power switching and reduced conduction losses.
• Robust thermal performance supporting operation up to 150°C junction temperature.

FET, MOSFET Arrays Applications

• DC-DC converter circuits requiring dual channel control
• Load switching applications for low-voltage systems
• General-purpose power management interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix ER2G against the manufacturer's current datasheet to confirm pinout compatibility and RoHS status. Confirm availability as distribution channels may list obsolete or end-of-life status for this specific part number variant before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET solution is required for 50V applications. Ensure the 300 mΩ on-resistance meets the efficiency requirements of the target circuit. Verify that the SOIC-8 footprint aligns with the PCB layout constraints and that the 1.7A current rating satisfies the peak load demands.

FET, MOSFET Arrays Part Context

This part belongs to the MMDF series of dual MOSFETs from onsemi. It serves as a space-saving alternative to discrete single-channel components in designs where two matching N-channel switches are needed. The series is designed for general-purpose switching tasks in consumer and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Check for direct replacements within the MMDF series or equivalent dual N-channel MOSFETs from other manufacturers. Verify that substitute parts match the 50V rating, 1.7A current capacity, and SOIC-8 package dimensions to ensure mechanical and electrical compatibility without redesigning the board.

FET, MOSFET Arrays FAQ

What is the maximum gate-source voltage for the MMDF1N05ER2G?

The maximum gate-source voltage is ±20 V.

Does this component support high-temperature operation?

Yes, the junction temperature range extends up to +150°C.

What is the typical on-resistance at 10V gate drive?

The maximum on-resistance (Rds(on)) is 300 mΩ at a gate-source voltage of 10 V.