FET, MOSFET Arrays MMDF2C03HDR2 product image

MMDF2C03HDR2

$0.46
  • Description:MOSFET N/P-CH 30V 4.1A/3A 8SOIC
  • Series:-

SKU:cea6eff75481 Category: Brand:

  
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MMDF2C03HDR2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 30V 4.1A/3A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for MMDF2C03HDR2

  • Description:MOSFET N/P-CH 30V 4.1A/3A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:4.1A, 3A
  • Rds On (Max) @ Id, Vgs:70mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:630pF @ 24V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for MMDF2C03HDR2

MMDF2C03HDR2

FET, MOSFET Arrays Overview

The MMDF2C03HDR2 is a complementary dual MOSFET device from onsemi's MiniMOS series, housed in an SO-8 surface-mount package. It integrates N-channel and P-channel power MOSFETs utilizing High Cell Density HDTMOS technology to achieve ultra-low RDS(on) and true logic-level performance. The component supports high energy handling in avalanche and commutation modes, featuring a drain-to-source diode with very low reverse recovery time. Designed for low-voltage, high-speed switching applications, it enables efficient power management in portable products and DC-DC converters while minimizing board space requirements.

FET, MOSFET Arrays Feature Summary

  • Integrates complementary N-channel and P-channel MOSFETs in a single miniature SO-8 package to save board space.
  • Utilizes High Cell Density HDTMOS process for ultra-low on-resistance and extended battery life in portable devices.
  • Features true logic-level gate drive capability, allowing direct interfacing with standard logic ICs.
  • Diode characterized for bridge circuits with high-speed soft recovery and specified avalanche energy for safety against voltage transients.

FET, MOSFET Arrays Applications

  • DC-DC converters
  • Power management in portable and battery-powered products such as computers and cellular phones
  • Low voltage motor controls in mass storage products like disk drives

MMDF2C03HDR2MMDF2C03HDR2
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